Diffusion of In and Ga in Selenized Cu-In and Cu-Ga Precursors

M. Marudachalam, H. Hichri, R. W. Birkmire, J. M. Schultz, A. B. Swartzlander, M. M. Al-Jassim

Research output: Contribution to conferencePaperpeer-review

12 Scopus Citations

Abstract

The interdiffusion of Ga and In in a CuGaSe2/CuInSe2 thin film diffusion couple and the diffusion of In into CuGaSe2 thin films were studied by Auger depth profiling. CuGaSe2 and CuInSe2 were obtained via selenization by H2Se of sequentially deposited Cu-Ga and Cu-In layers, respectively. The CuGaSe2/CuInSe2 diffusion couple was annealed at 650°C for 30 minutes in an Argon atmosphere. The thin film source of In was diffused into CuGaSe2 in the temperature range of 400°C to 600°C for 30 minutes in an Argon atmosphere. Bulk interdiffusion coefficients of In and Ga in the CuGaSe2/CuInSe2 couple annealed at 650°C, and the diffusion coefficients of In in CuGaSe2 films diffusion-annealed at various temperatures were determined. The interdiffusion coefficients of In and Ga at 650°C in the diffusion couple are similar (DIn = 1.5 × 10-11 cm2/sec and DGa = 4.0 × 10-11 cm2/sec). The diffusion coefficients of In in CuGaSe2 thin films varied from 2.0 × 10-13 cm2/sec to 4.5 × 10-12 cm2/sec in the temperature range of 400°C - 600°C.

Original languageAmerican English
Pages805-807
Number of pages3
DOIs
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 25th IEEE Photovoltaic Specialists Conference - Washington, DC, USA
Duration: 13 May 199617 May 1996

Conference

ConferenceProceedings of the 1996 25th IEEE Photovoltaic Specialists Conference
CityWashington, DC, USA
Period13/05/9617/05/96

NREL Publication Number

  • NREL/CP-22406

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