Diffusion of In and Ga in Selenized Cu-In and Cu-Ga Precursors

M. Marudachalam; H. Hichri; R. W. Birkmire; J. M. Schultz; A. B. Swartzlander; M. M. Al-Jassim

doi:10.1109/pvsc.1996.564250

Diffusion of In and Ga in Selenized Cu-In and Cu-Ga Precursors

M. Marudachalam, H. Hichri, R. W. Birkmire, J. M. Schultz, A. B. Swartzlander, M. M. Al-Jassim

Materials Science

Research output: Contribution to conference › Paper › peer-review

12 Scopus Citations

Abstract

The interdiffusion of Ga and In in a CuGaSe₂/CuInSe₂ thin film diffusion couple and the diffusion of In into CuGaSe₂ thin films were studied by Auger depth profiling. CuGaSe₂ and CuInSe₂ were obtained via selenization by H₂Se of sequentially deposited Cu-Ga and Cu-In layers, respectively. The CuGaSe₂/CuInSe₂ diffusion couple was annealed at 650°C for 30 minutes in an Argon atmosphere. The thin film source of In was diffused into CuGaSe₂ in the temperature range of 400°C to 600°C for 30 minutes in an Argon atmosphere. Bulk interdiffusion coefficients of In and Ga in the CuGaSe₂/CuInSe₂ couple annealed at 650°C, and the diffusion coefficients of In in CuGaSe₂ films diffusion-annealed at various temperatures were determined. The interdiffusion coefficients of In and Ga at 650°C in the diffusion couple are similar (D_In = 1.5 × 10^-11 cm²/sec and D_Ga = 4.0 × 10^-11 cm²/sec). The diffusion coefficients of In in CuGaSe₂ thin films varied from 2.0 × 10^-13 cm²/sec to 4.5 × 10^-12 cm²/sec in the temperature range of 400°C - 600°C.

Original language	American English
Pages	805-807
Number of pages	3
DOIs	https://doi.org/10.1109/pvsc.1996.564250 https://doi.org/10.1109/PVSC.1996.564250
State	Published - 1996
Event	Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference - Washington, DC, USA Duration: 13 May 1996 → 17 May 1996

Conference

Conference	Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference
City	Washington, DC, USA
Period	13/05/96 → 17/05/96

NREL Publication Number

NREL/CP-22406

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Marudachalam, M., Hichri, H., Birkmire, R. W., Schultz, J. M., Swartzlander, A. B., & Al-Jassim, M. M. (1996). Diffusion of In and Ga in Selenized Cu-In and Cu-Ga Precursors. 805-807. Paper presented at Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference, Washington, DC, USA. https://doi.org/10.1109/pvsc.1996.564250, https://doi.org/10.1109/PVSC.1996.564250

@conference{c031958696ca4f0bafda67ccc92ab39e,

title = "Diffusion of In and Ga in Selenized Cu-In and Cu-Ga Precursors",

abstract = "The interdiffusion of Ga and In in a CuGaSe2/CuInSe2 thin film diffusion couple and the diffusion of In into CuGaSe2 thin films were studied by Auger depth profiling. CuGaSe2 and CuInSe2 were obtained via selenization by H2Se of sequentially deposited Cu-Ga and Cu-In layers, respectively. The CuGaSe2/CuInSe2 diffusion couple was annealed at 650°C for 30 minutes in an Argon atmosphere. The thin film source of In was diffused into CuGaSe2 in the temperature range of 400°C to 600°C for 30 minutes in an Argon atmosphere. Bulk interdiffusion coefficients of In and Ga in the CuGaSe2/CuInSe2 couple annealed at 650°C, and the diffusion coefficients of In in CuGaSe2 films diffusion-annealed at various temperatures were determined. The interdiffusion coefficients of In and Ga at 650°C in the diffusion couple are similar (DIn = 1.5 × 10-11 cm2/sec and DGa = 4.0 × 10-11 cm2/sec). The diffusion coefficients of In in CuGaSe2 thin films varied from 2.0 × 10-13 cm2/sec to 4.5 × 10-12 cm2/sec in the temperature range of 400°C - 600°C.",

author = "M. Marudachalam and H. Hichri and Birkmire, {R. W.} and Schultz, {J. M.} and Swartzlander, {A. B.} and Al-Jassim, {M. M.}",

year = "1996",

doi = "10.1109/pvsc.1996.564250",

language = "American English",

pages = "805--807",

note = "Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference ; Conference date: 13-05-1996 Through 17-05-1996",

}

Marudachalam, M, Hichri, H, Birkmire, RW, Schultz, JM, Swartzlander, AB & Al-Jassim, MM 1996, 'Diffusion of In and Ga in Selenized Cu-In and Cu-Ga Precursors', Paper presented at Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference, Washington, DC, USA, 13/05/96 - 17/05/96 pp. 805-807. https://doi.org/10.1109/pvsc.1996.564250, https://doi.org/10.1109/PVSC.1996.564250

TY - CONF

T1 - Diffusion of In and Ga in Selenized Cu-In and Cu-Ga Precursors

AU - Marudachalam, M.

AU - Hichri, H.

AU - Birkmire, R. W.

AU - Schultz, J. M.

AU - Swartzlander, A. B.

AU - Al-Jassim, M. M.

PY - 1996

Y1 - 1996

N2 - The interdiffusion of Ga and In in a CuGaSe2/CuInSe2 thin film diffusion couple and the diffusion of In into CuGaSe2 thin films were studied by Auger depth profiling. CuGaSe2 and CuInSe2 were obtained via selenization by H2Se of sequentially deposited Cu-Ga and Cu-In layers, respectively. The CuGaSe2/CuInSe2 diffusion couple was annealed at 650°C for 30 minutes in an Argon atmosphere. The thin film source of In was diffused into CuGaSe2 in the temperature range of 400°C to 600°C for 30 minutes in an Argon atmosphere. Bulk interdiffusion coefficients of In and Ga in the CuGaSe2/CuInSe2 couple annealed at 650°C, and the diffusion coefficients of In in CuGaSe2 films diffusion-annealed at various temperatures were determined. The interdiffusion coefficients of In and Ga at 650°C in the diffusion couple are similar (DIn = 1.5 × 10-11 cm2/sec and DGa = 4.0 × 10-11 cm2/sec). The diffusion coefficients of In in CuGaSe2 thin films varied from 2.0 × 10-13 cm2/sec to 4.5 × 10-12 cm2/sec in the temperature range of 400°C - 600°C.

AB - The interdiffusion of Ga and In in a CuGaSe2/CuInSe2 thin film diffusion couple and the diffusion of In into CuGaSe2 thin films were studied by Auger depth profiling. CuGaSe2 and CuInSe2 were obtained via selenization by H2Se of sequentially deposited Cu-Ga and Cu-In layers, respectively. The CuGaSe2/CuInSe2 diffusion couple was annealed at 650°C for 30 minutes in an Argon atmosphere. The thin film source of In was diffused into CuGaSe2 in the temperature range of 400°C to 600°C for 30 minutes in an Argon atmosphere. Bulk interdiffusion coefficients of In and Ga in the CuGaSe2/CuInSe2 couple annealed at 650°C, and the diffusion coefficients of In in CuGaSe2 films diffusion-annealed at various temperatures were determined. The interdiffusion coefficients of In and Ga at 650°C in the diffusion couple are similar (DIn = 1.5 × 10-11 cm2/sec and DGa = 4.0 × 10-11 cm2/sec). The diffusion coefficients of In in CuGaSe2 thin films varied from 2.0 × 10-13 cm2/sec to 4.5 × 10-12 cm2/sec in the temperature range of 400°C - 600°C.

UR - http://www.scopus.com/inward/record.url?scp=0030397223&partnerID=8YFLogxK

U2 - 10.1109/pvsc.1996.564250

DO - 10.1109/pvsc.1996.564250

M3 - Paper

AN - SCOPUS:0030397223

SP - 805

EP - 807

T2 - Proceedings of the 1996 25th IEEE Photovoltaic Specialists Conference

Y2 - 13 May 1996 through 17 May 1996

ER -

Diffusion of In and Ga in Selenized Cu-In and Cu-Ga Precursors

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