Diode Characteristics in State-of-the-Art ZnO/CdS/Cu(In1-xGax) Se2 Solar Cells

Miguel A. Contreras, K. Ramanathan, J. Abushama, F. Hasoon, D. L. Young, B. Egaas, R. Noufi

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We report a new state of the art in thin-film polycrystalline Cu(In,Ga)Se2-based solar cells with the attainment of energy conversion efficiencies of 19·5%. An analysis of the performance of Cu(In,Ga)Se2 solar cells in terms of some absorber properties and other derived diode parameters is presented. The analysis reveals that the highestperformance cells can be associated with absorber bandgap values of ∼1·14eV, resulting in devices with the lowest values of diode saturation current density (∼3 χ 10-8 mA/cm2) and diode quality factors in the range 1·30 < A < 1·35. The data presented also support arguments of a reduced space charge region recombination as the reason for the improvement in the performance of such devices. In addition, a discussion is presented regarding the dependence of performance on energy band-gap, with an emphasis on wide-bandgap Cu(In,Ga)Se2 materials and views toward improving efficiency to >20% in thin-film polycrystalline Cu(In,Ga)Se2 solar cells. Published in 2005 by John Wiley & Sons, Ltd.

Original languageAmerican English
Pages (from-to)209-216
Number of pages8
JournalProgress in Photovoltaics: Research and Applications
Issue number3
StatePublished - 2005

NREL Publication Number

  • NREL/JA-520-37526


  • Cu(In,Ga)Se
  • Diode quality factor
  • Recombination
  • Saturation current
  • Thin-film solar cells
  • World record efficiency


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