Direct and Inverse Photoelectron Spectroscopy Evidence for a Revised Picture of Electronic States of Negative Polarons in n-Doped C60: Article No. 2415336

Yutong Ren, Qi Sun, Suman Kuila, Kan Tang, Hong Li, Stephen Barlow, Seth Marder, Jean-Luc Bredas, Antoine Kahn

Research output: Contribution to journalArticlepeer-review

Abstract

Determining the electronic levels associated with polarons, the fundamental charge carriers in organic semiconductors, is key to understanding the charge transport properties of these materials. Recent findings challenge the traditional view of these electronic levels by highlighting the importance of intra-molecular Coulomb interactions in polarons. Experimental evidence was previously presented for a revised model of the negative polaron in the case of the polymer semiconductor poly(NDI2OD-T2); there, the addition of an excess electron was seen to lead to the emergence of a singly occupied state within the energy gap of the undoped material and an unoccupied state above the edge of the conduction states. Here, focus is on a small-molecule semiconductor, C60, and spectral evidence is provided of a similar picture for the new states appearing upon polaron formation. Specifically, direct and inverse photoemission spectroscopy is used to investigate the density of states in C60 films n-doped with two dimeric dopants. The Coulomb interaction energy (Hubbard U) of the C60 anion is experimentally determined to be ~1.1 eV, a value that aligns closely with theoretical predictions.
Original languageAmerican English
JournalAdvanced Functional Materials
DOIs
StatePublished - 2024

NREL Publication Number

  • NREL/JA-5900-91008

Keywords

  • fullerenes
  • n-doping
  • on-site Coulomb interaction
  • photoelectron spectroscopy
  • polarons

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