Abstract
Many high efficiency CuInSe/sub 2/ based solar cells show blocking or non-ohmic contact behavior in their current-voltage characteristic which has often been attributed to the Mo/CulnSe/sub 2/ back contact. A novel device configuration is presented which allows the current-voltage characteristic of the Mo/CuInSe/sub 2/ junction to be analyzed separately from the rest of the operating solar cell.Direct measurements of the back contact on operating CuInSe/sub 2/ contact is ohmic with negligible contact resistance compared to the total series resistance of the device.
| Original language | American English |
|---|---|
| Pages | 917-919 |
| Number of pages | 3 |
| DOIs | |
| State | Published - 1996 |
| Event | Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996 |
Conference
| Conference | Twenty Fifth IEEE Photovoltaic Specialists Conference |
|---|---|
| City | Washington, D.C. |
| Period | 13/05/96 → 17/05/96 |
Bibliographical note
Work performed by the University of Delaware, Newark, DelawareNLR Publication Number
- NREL/CP-22423