Abstract
The built-in electrical potential of Cu(In, Ga)Se2 (CIGS) solar cells was measured. The profiles of the electrical potential along cross sections of the device demonstrates that the p-n junction is a buried homojunction located in the CIGS film. The built-in electric fields had indicated that the cadmium sulfide and zinc oxide layers of the device structure were inactive for the collection of photoexcited carriers.
Original language | American English |
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Pages (from-to) | 127-129 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 82 |
Issue number | 1 |
DOIs | |
State | Published - 2003 |
NREL Publication Number
- NREL/JA-520-33846