Direct Evidence of a Buried Homojunction in Cu(In,Ga)Se2 Solar Cells

Chun Sheng Jiang, F. S. Hasoon, H. R. Moutinho, H. A. Al-Thani, M. J. Romero, M. M. Al-Jassim

Research output: Contribution to journalArticlepeer-review

120 Scopus Citations


The built-in electrical potential of Cu(In, Ga)Se2 (CIGS) solar cells was measured. The profiles of the electrical potential along cross sections of the device demonstrates that the p-n junction is a buried homojunction located in the CIGS film. The built-in electric fields had indicated that the cadmium sulfide and zinc oxide layers of the device structure were inactive for the collection of photoexcited carriers.

Original languageAmerican English
Pages (from-to)127-129
Number of pages3
JournalApplied Physics Letters
Issue number1
StatePublished - 2003

NREL Publication Number

  • NREL/JA-520-33846


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