Direct Evidence of a Cu(In,Ga)3Se5 Phase in a Bulk, High-Efficiency Cu(In,Ga)Se2 Device using Atom Probe Tomography

Adam Stokes; Brian Gorman; Dave Diercks; Brian Egaas; Mowafak Al-Jassim

doi:10.1109/PVSC.2014.6925649

Direct Evidence of a Cu(In,Ga)3Se5 Phase in a Bulk, High-Efficiency Cu(In,Ga)Se2 Device using Atom Probe Tomography

Adam Stokes, Brian Gorman, Dave Diercks, Brian Egaas, Mowafak Al-Jassim

Materials Science

Research output: Contribution to conference › Paper › peer-review

4 Scopus Citations

Abstract

This paper will descuss the findings of an ordered vacancy compound (OVC) phase, Cu(In,Ga)₃Se₅ (135 phase), that exists deep into the bulk of a high-efficiency CIGSe absorber as determined by atom probe tomography (APT). To date, literature has shown that absorbers grown with the three-step process exhibit the 135 phase only within the first few nanometers from the CdS/CIGSe interface. In this contribution, we have found a small volume (100 nm × 100 nm × 300 nm) of the 135 phase to exist about 400 nm into the absorber. The paper will discuss possibly why the phase was found by APT and not by other characterization techniques.

Original language	American English
Pages	3335-3337
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2014.6925649 https://doi.org/10.1109/PVSC.2014.6925649
State	Published - 15 Oct 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014

Conference

Conference	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	8/06/14 → 13/06/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

NREL Publication Number

NREL/CP-5K00-61347

Keywords

atom probe tomography
chalcopyrite
Cu depletion
ordered vacancy compounds (OVC)
photovoltaic cells
transmission electron microscopy

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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Stokes, A., Gorman, B., Diercks, D., Egaas, B., & Al-Jassim, M. (2014). Direct Evidence of a Cu(In,Ga)3Se5 Phase in a Bulk, High-Efficiency Cu(In,Ga)Se2 Device using Atom Probe Tomography. 3335-3337. Paper presented at 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States. https://doi.org/10.1109/PVSC.2014.6925649, https://doi.org/10.1109/PVSC.2014.6925649

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title = "Direct Evidence of a Cu(In,Ga)3Se5 Phase in a Bulk, High-Efficiency Cu(In,Ga)Se2 Device using Atom Probe Tomography",

abstract = "This paper will descuss the findings of an ordered vacancy compound (OVC) phase, Cu(In,Ga)3Se5 (135 phase), that exists deep into the bulk of a high-efficiency CIGSe absorber as determined by atom probe tomography (APT). To date, literature has shown that absorbers grown with the three-step process exhibit the 135 phase only within the first few nanometers from the CdS/CIGSe interface. In this contribution, we have found a small volume (100 nm × 100 nm × 300 nm) of the 135 phase to exist about 400 nm into the absorber. The paper will discuss possibly why the phase was found by APT and not by other characterization techniques.",

keywords = "atom probe tomography, chalcopyrite, Cu depletion, ordered vacancy compounds (OVC), photovoltaic cells, transmission electron microscopy",

author = "Adam Stokes and Brian Gorman and Dave Diercks and Brian Egaas and Mowafak Al-Jassim",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

year = "2014",

month = oct,

day = "15",

doi = "10.1109/PVSC.2014.6925649",

language = "American English",

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Stokes, A, Gorman, B, Diercks, D, Egaas, B & Al-Jassim, M 2014, 'Direct Evidence of a Cu(In,Ga)3Se5 Phase in a Bulk, High-Efficiency Cu(In,Ga)Se2 Device using Atom Probe Tomography', Paper presented at 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 8/06/14 - 13/06/14 pp. 3335-3337. https://doi.org/10.1109/PVSC.2014.6925649, https://doi.org/10.1109/PVSC.2014.6925649

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T1 - Direct Evidence of a Cu(In,Ga)3Se5 Phase in a Bulk, High-Efficiency Cu(In,Ga)Se2 Device using Atom Probe Tomography

AU - Stokes, Adam

AU - Gorman, Brian

AU - Diercks, Dave

AU - Egaas, Brian

AU - Al-Jassim, Mowafak

PY - 2014/10/15

Y1 - 2014/10/15

N2 - This paper will descuss the findings of an ordered vacancy compound (OVC) phase, Cu(In,Ga)3Se5 (135 phase), that exists deep into the bulk of a high-efficiency CIGSe absorber as determined by atom probe tomography (APT). To date, literature has shown that absorbers grown with the three-step process exhibit the 135 phase only within the first few nanometers from the CdS/CIGSe interface. In this contribution, we have found a small volume (100 nm × 100 nm × 300 nm) of the 135 phase to exist about 400 nm into the absorber. The paper will discuss possibly why the phase was found by APT and not by other characterization techniques.

AB - This paper will descuss the findings of an ordered vacancy compound (OVC) phase, Cu(In,Ga)3Se5 (135 phase), that exists deep into the bulk of a high-efficiency CIGSe absorber as determined by atom probe tomography (APT). To date, literature has shown that absorbers grown with the three-step process exhibit the 135 phase only within the first few nanometers from the CdS/CIGSe interface. In this contribution, we have found a small volume (100 nm × 100 nm × 300 nm) of the 135 phase to exist about 400 nm into the absorber. The paper will discuss possibly why the phase was found by APT and not by other characterization techniques.

KW - atom probe tomography

KW - chalcopyrite

KW - Cu depletion

KW - ordered vacancy compounds (OVC)

KW - photovoltaic cells

KW - transmission electron microscopy

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U2 - 10.1109/PVSC.2014.6925649

DO - 10.1109/PVSC.2014.6925649

M3 - Paper

AN - SCOPUS:84912122871

SP - 3335

EP - 3337

T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

Direct Evidence of a Cu(In,Ga)3Se5 Phase in a Bulk, High-Efficiency Cu(In,Ga)Se2 Device using Atom Probe Tomography

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

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