Direct Evidence of a Cu(In,Ga)3Se5 Phase in a Bulk, High-Efficiency Cu(In,Ga)Se2 Device using Atom Probe Tomography

Adam Stokes, Brian Gorman, Dave Diercks, Brian Egaas, Mowafak Al-Jassim

Research output: Contribution to conferencePaperpeer-review

4 Scopus Citations

Abstract

This paper will descuss the findings of an ordered vacancy compound (OVC) phase, Cu(In,Ga)3Se5 (135 phase), that exists deep into the bulk of a high-efficiency CIGSe absorber as determined by atom probe tomography (APT). To date, literature has shown that absorbers grown with the three-step process exhibit the 135 phase only within the first few nanometers from the CdS/CIGSe interface. In this contribution, we have found a small volume (100 nm × 100 nm × 300 nm) of the 135 phase to exist about 400 nm into the absorber. The paper will discuss possibly why the phase was found by APT and not by other characterization techniques.

Original languageAmerican English
Pages3335-3337
Number of pages3
DOIs
StatePublished - 15 Oct 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: 8 Jun 201413 Jun 2014

Conference

Conference40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/TerritoryUnited States
CityDenver
Period8/06/1413/06/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

NREL Publication Number

  • NREL/CP-5K00-61347

Keywords

  • atom probe tomography
  • chalcopyrite
  • Cu depletion
  • ordered vacancy compounds (OVC)
  • photovoltaic cells
  • transmission electron microscopy

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