Direct-Indirect Crossover in GaxIn1-xP Alloys

K. Alberi; B. Fluegel; M. A. Steiner; R. France; W. Olavarria; A. Mascarenhas

doi:10.1063/1.3663439

Direct-Indirect Crossover in GaxIn1-xP Alloys

K. Alberi, B. Fluegel, M. A. Steiner, R. France, W. Olavarria, A. Mascarenhas

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

15 Scopus Citations

Abstract

The energy and composition of the direct to indirect bandgap crossover in Ga _xIn _1-xP significantly influences its potential for optoelectronic devices, such as solar cells and light emitting diodes, however considerable discrepancies still remain in the literature with regard to the precise value of the crossover composition x _c. We revisit this issue in Ga _xIn _1-xP films epitaxially grown on GaAs substrates. Observation of concurrent yet distinct direct and indirect transitions in Ga _0.719In _0.281P at 2 K using time integrated and time resolved photoluminescence studies places the crossover very near the composition x _C 0.71.

Original language	American English
Article number	113701
Number of pages	5
Journal	Journal of Applied Physics
Volume	110
Issue number	11
DOIs	https://doi.org/10.1063/1.3663439 https://doi.org/10.1063/1.3663439
State	Published - 1 Dec 2011

NREL Publication Number

NREL/JA-5900-52313

Keywords

bandgap crossover
GaAs substrates
GaxIn1-xP alloys
photovoltaic

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title = "Direct-Indirect Crossover in GaxIn1-xP Alloys",

abstract = "The energy and composition of the direct to indirect bandgap crossover in Ga xIn 1-xP significantly influences its potential for optoelectronic devices, such as solar cells and light emitting diodes, however considerable discrepancies still remain in the literature with regard to the precise value of the crossover composition x c. We revisit this issue in Ga xIn 1-xP films epitaxially grown on GaAs substrates. Observation of concurrent yet distinct direct and indirect transitions in Ga 0.719In 0.281P at 2 K using time integrated and time resolved photoluminescence studies places the crossover very near the composition x C 0.71.",

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AU - Alberi, K.

AU - Fluegel, B.

AU - Steiner, M. A.

AU - France, R.

AU - Olavarria, W.

AU - Mascarenhas, A.

PY - 2011/12/1

Y1 - 2011/12/1

N2 - The energy and composition of the direct to indirect bandgap crossover in Ga xIn 1-xP significantly influences its potential for optoelectronic devices, such as solar cells and light emitting diodes, however considerable discrepancies still remain in the literature with regard to the precise value of the crossover composition x c. We revisit this issue in Ga xIn 1-xP films epitaxially grown on GaAs substrates. Observation of concurrent yet distinct direct and indirect transitions in Ga 0.719In 0.281P at 2 K using time integrated and time resolved photoluminescence studies places the crossover very near the composition x C 0.71.

AB - The energy and composition of the direct to indirect bandgap crossover in Ga xIn 1-xP significantly influences its potential for optoelectronic devices, such as solar cells and light emitting diodes, however considerable discrepancies still remain in the literature with regard to the precise value of the crossover composition x c. We revisit this issue in Ga xIn 1-xP films epitaxially grown on GaAs substrates. Observation of concurrent yet distinct direct and indirect transitions in Ga 0.719In 0.281P at 2 K using time integrated and time resolved photoluminescence studies places the crossover very near the composition x C 0.71.

KW - bandgap crossover

KW - GaAs substrates

KW - GaxIn1-xP alloys

KW - photovoltaic

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U2 - 10.1063/1.3663439

DO - 10.1063/1.3663439

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VL - 110

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Direct-Indirect Crossover in GaxIn1-xP Alloys

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