Direct-Indirect Crossover in GaxIn1-xP Alloys

K. Alberi, B. Fluegel, M. A. Steiner, R. France, W. Olavarria, A. Mascarenhas

Research output: Contribution to journalArticlepeer-review

15 Scopus Citations


The energy and composition of the direct to indirect bandgap crossover in Ga xIn 1-xP significantly influences its potential for optoelectronic devices, such as solar cells and light emitting diodes, however considerable discrepancies still remain in the literature with regard to the precise value of the crossover composition x c. We revisit this issue in Ga xIn 1-xP films epitaxially grown on GaAs substrates. Observation of concurrent yet distinct direct and indirect transitions in Ga 0.719In 0.281P at 2 K using time integrated and time resolved photoluminescence studies places the crossover very near the composition x C 0.71.

Original languageAmerican English
Article number113701
Number of pages5
JournalJournal of Applied Physics
Issue number11
StatePublished - 1 Dec 2011

NREL Publication Number

  • NREL/JA-5900-52313


  • bandgap crossover
  • GaAs substrates
  • GaxIn1-xP alloys
  • photovoltaic


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