Direct Link Between Disorder and Magnetoresistance in Topological Semimetals: Article No. L220206

Jocienne Nelson, Ian Leahy, Anthony Rice, Chase Brooks, Glenn Teeter, Mark van Schilfgaarde, Stephan Lany, Brian Fluegel, Minhyea Lee, Kirstin Alberi

Research output: Contribution to journalArticlepeer-review

2 Scopus Citations

Abstract

The extent to which disorder influences the properties of topological semimetals is relevant to the understanding of topological states and their use in practical applications. Using molecular beam epitaxy, we achieve systematic control of point defect concentrations in the prototypical Dirac semimetal Cd3As2 to gain insight into the role of disorder on electron transport behavior. Using the guiding center diffusion model for linear magnetoresistance, we extract point defect densities as a function of deposition conditions. We find that reducing cadmium defect concentrations by an order of magnitude results in an 2x increase in the magnetoresistance from 450% to 900%. This finding yields important information in the quest to identify the origin of linear magnetoresistance in a wider range of materials.
Original languageAmerican English
Number of pages6
JournalPhysical Review B
Volume107
Issue number22
DOIs
StatePublished - 2023

Bibliographical note

See NREL/JA-5K00-83242 for preprint

NREL Publication Number

  • NREL/JA-5K00-87009

Keywords

  • Cd3As2
  • defects
  • Dirac
  • disorder
  • epitaxy
  • magnetotransport
  • topological semimetal

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