Direct Link Between Disorder, Mobility and Magnetoresistance in Topological Semimetals: arXiv:2206.10023 [cond-mat.mtrl-sci]

Jocienne Nelson, Anthony Rice, Chase Brooks, Ian Leahy, Glenn Teeter, Mark van Schilfgaarde, Stephan Lany, Brian Fluegel, Minhyea Lee, Kirstin Alberi

Research output: Contribution to journalArticle

Abstract

The extent to which disorder influences the properties of topological semimetals remains an open question and is relevant to both the understanding of topological states and the use of topological materials in practical applications. Here, we achieve unmatched and systematic control of point defect concentrations in the prototypical Dirac semimetal Cd3As2 to gain important insight into the role of disorder on electron transport behavior. We find that arsenic vacancies introduce localized states near the Fermi level and strongly influence the electron mobility. Reducing arsenic vacancies by changing the As/Cd flux ratio used during deposition results in an increase in the magnetoresistance from 200%-1000% and an increase in mobility from 5000-18,000 cm2/Vs. However, the degree of linear magnetoresistance, which has previously been linked to disorder, is found here to correlate inversely with measures of disorder, including disorder potential and disorder correlation lengths. This finding yields important new information in the quest to identify the origin of linear magnetoresistance in a wider range of materials.
Original languageAmerican English
Number of pages19
JournalArXiv.org
DOIs
StatePublished - 2022

Bibliographical note

See NREL/JA-5K00-87009 for final paper as published in Physical Review B

NREL Publication Number

  • NREL/JA-5K00-83242

Keywords

  • Cd3As2
  • defects
  • Dirac
  • disorder
  • epitaxy
  • magnetotransport
  • topological semimetal

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