Direct Measurement of Built-in Electrical Potential in Photovoltaic Devices by Scanning Kelvin Probe Microscopy

Research output: Contribution to conferencePaper

Abstract

We report on direct measurements of the built-in electrical potential in Cu(In,Ga)Se2, GaInP2 single-junction, and GaInP2/GaAs tandem-junction solar cells, by using scanning Kelvin probe microscopy. Potential profiles on cross sections of the devices were measured quantitatively and spatially resolved in open and short circuit, under and without illuminations, with selective photon energiesmatching the band gaps of the junctions. The measurements provide valuable information about the electrical properties of the devices and are useful for understanding the performance and improving the design of solar cells.
Original languageAmerican English
Number of pages7
StatePublished - 2003
EventNational Center for Photovoltaics (NCPV) and Solar Program Review Meeting - Denver, Colorado
Duration: 24 Mar 200326 Mar 2003

Conference

ConferenceNational Center for Photovoltaics (NCPV) and Solar Program Review Meeting
CityDenver, Colorado
Period24/03/0326/03/03

NREL Publication Number

  • NREL/CP-520-33528

Keywords

  • built-in electrical potential
  • CIGS
  • direct measurement
  • III-V solar cells
  • tandem junctions

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