Abstract
We report on direct measurements of the built-in electrical potential in Cu(In,Ga)Se2, GaInP2 single-junction, and GaInP2/GaAs tandem-junction solar cells, by using scanning Kelvin probe microscopy. Potential profiles on cross sections of the devices were measured quantitatively and spatially resolved in open and short circuit, under and without illuminations, with selective photon energiesmatching the band gaps of the junctions. The measurements provide valuable information about the electrical properties of the devices and are useful for understanding the performance and improving the design of solar cells.
Original language | American English |
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Number of pages | 7 |
State | Published - 2003 |
Event | National Center for Photovoltaics (NCPV) and Solar Program Review Meeting - Denver, Colorado Duration: 24 Mar 2003 → 26 Mar 2003 |
Conference
Conference | National Center for Photovoltaics (NCPV) and Solar Program Review Meeting |
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City | Denver, Colorado |
Period | 24/03/03 → 26/03/03 |
NREL Publication Number
- NREL/CP-520-33528
Keywords
- built-in electrical potential
- CIGS
- direct measurement
- III-V solar cells
- tandem junctions