Direct Measurement of Electrical Potentials in GaInP2 Solar Cells

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18 Scopus Citations


We report on the application of electrostatic force microscopy to photovoltaic devices. Profiles of electrical potentials on cross sections of a GaInP2 solar cell device were measured quantitatively and spatially resolved. Two potentials are assigned, respectively, to the p-n junction of GaInP2 and the band offset between the GaInP2 base layer and the GaAs substrate. In addition to the flattening of the p-n junction by the light irradiations, two changes of the potential that positively contribute to the open-circuit voltage of the device are found at locations close to the window and the back surface field layers.

Original languageAmerican English
Pages (from-to)2569-2571
Number of pages3
JournalApplied Physics Letters
Issue number14
StatePublished - 2002

NREL Publication Number

  • NREL/JA-520-32382


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