Direct Measurement of Electrical Potentials in GaInP2 Solar Cells

Chun Sheng Jiang; H. R. Moutinho; J. F. Geisz; D. J. Friedman; M. M. Al-Jassim

doi:10.1063/1.1509114

Direct Measurement of Electrical Potentials in GaInP2 Solar Cells

Chun Sheng Jiang, H. R. Moutinho, J. F. Geisz, D. J. Friedman, M. M. Al-Jassim

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

18 Scopus Citations

Abstract

We report on the application of electrostatic force microscopy to photovoltaic devices. Profiles of electrical potentials on cross sections of a GaInP₂ solar cell device were measured quantitatively and spatially resolved. Two potentials are assigned, respectively, to the p-n junction of GaInP₂ and the band offset between the GaInP₂ base layer and the GaAs substrate. In addition to the flattening of the p-n junction by the light irradiations, two changes of the potential that positively contribute to the open-circuit voltage of the device are found at locations close to the window and the back surface field layers.

Original language	American English
Pages (from-to)	2569-2571
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	14
DOIs	https://doi.org/10.1063/1.1509114 https://doi.org/10.1063/1.1509114
State	Published - 2002

NREL Publication Number

NREL/JA-520-32382

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title = "Direct Measurement of Electrical Potentials in GaInP2 Solar Cells",

abstract = "We report on the application of electrostatic force microscopy to photovoltaic devices. Profiles of electrical potentials on cross sections of a GaInP2 solar cell device were measured quantitatively and spatially resolved. Two potentials are assigned, respectively, to the p-n junction of GaInP2 and the band offset between the GaInP2 base layer and the GaAs substrate. In addition to the flattening of the p-n junction by the light irradiations, two changes of the potential that positively contribute to the open-circuit voltage of the device are found at locations close to the window and the back surface field layers.",

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AU - Moutinho, H. R.

AU - Geisz, J. F.

AU - Friedman, D. J.

AU - Al-Jassim, M. M.

PY - 2002

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AB - We report on the application of electrostatic force microscopy to photovoltaic devices. Profiles of electrical potentials on cross sections of a GaInP2 solar cell device were measured quantitatively and spatially resolved. Two potentials are assigned, respectively, to the p-n junction of GaInP2 and the band offset between the GaInP2 base layer and the GaAs substrate. In addition to the flattening of the p-n junction by the light irradiations, two changes of the potential that positively contribute to the open-circuit voltage of the device are found at locations close to the window and the back surface field layers.

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SP - 2569

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Direct Measurement of Electrical Potentials in GaInP2 Solar Cells

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