Direct Observation of Grain Boundary PN Junction Potentials in CIGS Using Photoemission and Low Energy Electron Microscopy (PELEEM)

Calvin K. Chan; Taisuke Ohta; Gary L. Kellogg; Lorelle Mansfield; Kannan Ramanathan; Rommel Noufi

doi:10.1109/PVSC.2014.6925298

Direct Observation of Grain Boundary PN Junction Potentials in CIGS Using Photoemission and Low Energy Electron Microscopy (PELEEM)

Calvin K. Chan, Taisuke Ohta, Gary L. Kellogg, Lorelle Mansfield, Kannan Ramanathan, Rommel Noufi

Materials Science

Research output: Contribution to conference › Paper › peer-review

Abstract

Spectroscopic microscopies with chemical and electronic structure information have become important tools for understanding the complex structure-property-performance relationships of high performing Cu(In_1-xGa_x)Se₂ (CIGS) photovoltaic materials and devices. Here, we describe the application of spectrally resolved photoemission and low-energy electron microscopy (spec-PELEEM) to CIGS. With the ability to map relative electric potentials with high fidelity, a large variation in the built-in pn junction potential was observed at CIGS grain boundaries. In any given 20 μm region, the built-in voltage spanned the range from depletion (∼ 0.5 V) to inversion (∼ 1.4 V). These grain-to-grain variations could explain the electron collection efficiency of CIGS grain boundaries and devices. These results highlight the potential of spec-PELEEM to solve critical structure-property-performance issues facing compound thin-film materials.

Original language	American English
Pages	1908-1911
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2014.6925298 https://doi.org/10.1109/PVSC.2014.6925298
State	Published - 15 Oct 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014

Conference

Conference	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	8/06/14 → 13/06/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

NREL Publication Number

NREL/CP-5K00-63536

Keywords

electron microscopy
II-VI semiconductor materials
p-n junctions
photoelectron microscopy
photovoltaic cells
spectroscopy
thin-film devices

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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Chan, C. K., Ohta, T., Kellogg, G. L., Mansfield, L., Ramanathan, K., & Noufi, R. (2014). Direct Observation of Grain Boundary PN Junction Potentials in CIGS Using Photoemission and Low Energy Electron Microscopy (PELEEM). 1908-1911. Paper presented at 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States. https://doi.org/10.1109/PVSC.2014.6925298, https://doi.org/10.1109/PVSC.2014.6925298

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title = "Direct Observation of Grain Boundary PN Junction Potentials in CIGS Using Photoemission and Low Energy Electron Microscopy (PELEEM)",

abstract = "Spectroscopic microscopies with chemical and electronic structure information have become important tools for understanding the complex structure-property-performance relationships of high performing Cu(In1-xGax)Se2 (CIGS) photovoltaic materials and devices. Here, we describe the application of spectrally resolved photoemission and low-energy electron microscopy (spec-PELEEM) to CIGS. With the ability to map relative electric potentials with high fidelity, a large variation in the built-in pn junction potential was observed at CIGS grain boundaries. In any given 20 μm region, the built-in voltage spanned the range from depletion (∼ 0.5 V) to inversion (∼ 1.4 V). These grain-to-grain variations could explain the electron collection efficiency of CIGS grain boundaries and devices. These results highlight the potential of spec-PELEEM to solve critical structure-property-performance issues facing compound thin-film materials.",

keywords = "electron microscopy, II-VI semiconductor materials, p-n junctions, photoelectron microscopy, photovoltaic cells, spectroscopy, thin-film devices",

author = "Chan, {Calvin K.} and Taisuke Ohta and Kellogg, {Gary L.} and Lorelle Mansfield and Kannan Ramanathan and Rommel Noufi",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

year = "2014",

month = oct,

day = "15",

doi = "10.1109/PVSC.2014.6925298",

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Chan, CK, Ohta, T, Kellogg, GL, Mansfield, L, Ramanathan, K & Noufi, R 2014, 'Direct Observation of Grain Boundary PN Junction Potentials in CIGS Using Photoemission and Low Energy Electron Microscopy (PELEEM)', Paper presented at 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 8/06/14 - 13/06/14 pp. 1908-1911. https://doi.org/10.1109/PVSC.2014.6925298, https://doi.org/10.1109/PVSC.2014.6925298

Direct Observation of Grain Boundary PN Junction Potentials in CIGS Using Photoemission and Low Energy Electron Microscopy (PELEEM). / Chan, Calvin K.; Ohta, Taisuke; Kellogg, Gary L. et al.
2014. 1908-1911 Paper presented at 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States.

Research output: Contribution to conference › Paper › peer-review

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T1 - Direct Observation of Grain Boundary PN Junction Potentials in CIGS Using Photoemission and Low Energy Electron Microscopy (PELEEM)

AU - Chan, Calvin K.

AU - Ohta, Taisuke

AU - Kellogg, Gary L.

AU - Mansfield, Lorelle

AU - Ramanathan, Kannan

AU - Noufi, Rommel

PY - 2014/10/15

Y1 - 2014/10/15

N2 - Spectroscopic microscopies with chemical and electronic structure information have become important tools for understanding the complex structure-property-performance relationships of high performing Cu(In1-xGax)Se2 (CIGS) photovoltaic materials and devices. Here, we describe the application of spectrally resolved photoemission and low-energy electron microscopy (spec-PELEEM) to CIGS. With the ability to map relative electric potentials with high fidelity, a large variation in the built-in pn junction potential was observed at CIGS grain boundaries. In any given 20 μm region, the built-in voltage spanned the range from depletion (∼ 0.5 V) to inversion (∼ 1.4 V). These grain-to-grain variations could explain the electron collection efficiency of CIGS grain boundaries and devices. These results highlight the potential of spec-PELEEM to solve critical structure-property-performance issues facing compound thin-film materials.

AB - Spectroscopic microscopies with chemical and electronic structure information have become important tools for understanding the complex structure-property-performance relationships of high performing Cu(In1-xGax)Se2 (CIGS) photovoltaic materials and devices. Here, we describe the application of spectrally resolved photoemission and low-energy electron microscopy (spec-PELEEM) to CIGS. With the ability to map relative electric potentials with high fidelity, a large variation in the built-in pn junction potential was observed at CIGS grain boundaries. In any given 20 μm region, the built-in voltage spanned the range from depletion (∼ 0.5 V) to inversion (∼ 1.4 V). These grain-to-grain variations could explain the electron collection efficiency of CIGS grain boundaries and devices. These results highlight the potential of spec-PELEEM to solve critical structure-property-performance issues facing compound thin-film materials.

KW - electron microscopy

KW - II-VI semiconductor materials

KW - p-n junctions

KW - photoelectron microscopy

KW - photovoltaic cells

KW - spectroscopy

KW - thin-film devices

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DO - 10.1109/PVSC.2014.6925298

M3 - Paper

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T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

Direct Observation of Grain Boundary PN Junction Potentials in CIGS Using Photoemission and Low Energy Electron Microscopy (PELEEM)

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

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