Direct Observation of the E_ Resonant State in GaAs1-xBix

Kirstin Alberi, Daniel Beaton, Angelo Mascarenhas

Research output: Contribution to journalArticlepeer-review

14 Scopus Citations


Bismuth-derived resonant states with T2 symmetry are detected in the valence band of GaAs1-xBix using electromodulated reflectance. A doublet is located 42 meV below the valence-band edge of GaAs that is split by local strain around isolated Bi impurity atoms. A transition associated with a singlet is also observed just above the GaAs spin-orbit split-off band. These states move deeper into the valence band with increasing Bi concentration but at a much slower rate than the well-known giant upward movement of the valence-band edge in GaAs1-xBix. Our results provide key insight for clarifying the mechanisms by which isovalent impurities alter the band structure of the host semiconductor.

Original languageAmerican English
Article numberArticle No. 241201
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number24
StatePublished - 14 Dec 2015

Bibliographical note

Publisher Copyright:
© 2015 American Physical Society.

NREL Publication Number

  • NREL/JA-5K00-65508


  • GaAsBi
  • resonant level
  • semiconductor optical properties


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