Abstract
Solar water splitting via multi-junction semiconductor photoelectrochemical cells provides direct conversion of solar energy to stored chemical energy as hydrogen bonds. Economical hydrogen production demands high conversion efficiency to reduce balance-of-systems costs. For sufficient photovoltage, water-splitting efficiency is proportional to the device photocurrent, which can be tuned by judicious selection and integration of optimal semiconductor bandgaps. Here, we demonstrate highly efficient, immersed water-splitting electrodes enabled by inverted metamorphic epitaxy and a transparent graded buffer that allows the bandgap of each junction to be independently varied. Voltage losses at the electrolyte interface are reduced by 0.55 V over traditional, uniformly p-doped photocathodes by using a buried p-n junction. Advanced on-sun benchmarking, spectrally corrected and validated with incident photon-to-current efficiency, yields over 16% solar-to-hydrogen efficiency with GaInP/GaInAs tandem absorbers, representing a 60% improvement over the classical, high-efficiency tandem III-V device.
Original language | American English |
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Article number | Article No. 17028 |
Number of pages | 8 |
Journal | Nature Energy |
Volume | 2 |
Issue number | 4 |
DOIs | |
State | Published - 13 Mar 2017 |
Bibliographical note
Publisher Copyright:© 2017 Macmillan Publishers Limited, part of Springer Nature. All rights reserved.
NREL Publication Number
- NREL/JA-5900-66837
Keywords
- III-V semiconductors
- inverted metamorphic multijunction semiconductors
- solar water splitting