Direct-to-Indirect Electronic State Transition in Dynamically Compressed GaAs Quantum Wells

P. Grivickas, J. F. Geisz, Y. M. Gupta

Research output: Contribution to journalArticlepeer-review

3 Scopus Citations


Dynamic compression of GaAs quantum wells was achieved to examine the direct-to-indirect transition in a reduced dimension semiconductor structure under uniaxial strain conditions. Our results show that the transformation deviates significantly from the electronic structure predictions using bulk deformation potentials. This finding is attributed to the suppression of real-space type-II transitions by quantum state interactions due to the presence of large anisotropic strains.

Original languageAmerican English
Article number072101
Number of pages4
JournalApplied Physics Letters
Issue number7
StatePublished - 13 Aug 2018

Bibliographical note

Publisher Copyright:
© 2018 Author(s).

NREL Publication Number

  • NREL/JA-5J00-71420


  • electronic structure
  • gallium arsenide
  • III-V semiconductors
  • quantum theory
  • semiconducting gallium
  • semiconducting gallium arsenide
  • strain


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