Direct-to-Indirect Electronic State Transition in Dynamically Compressed GaAs Quantum Wells

P. Grivickas; J. F. Geisz; Y. M. Gupta

doi:10.1063/1.5038723

Direct-to-Indirect Electronic State Transition in Dynamically Compressed GaAs Quantum Wells

P. Grivickas, J. F. Geisz, Y. M. Gupta

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

3 Scopus Citations

Abstract

Dynamic compression of GaAs quantum wells was achieved to examine the direct-to-indirect transition in a reduced dimension semiconductor structure under uniaxial strain conditions. Our results show that the transformation deviates significantly from the electronic structure predictions using bulk deformation potentials. This finding is attributed to the suppression of real-space type-II transitions by quantum state interactions due to the presence of large anisotropic strains.

Original language	American English
Article number	072101
Number of pages	4
Journal	Applied Physics Letters
Volume	113
Issue number	7
DOIs	https://doi.org/10.1063/1.5038723 https://doi.org/10.1063/1.5038723
State	Published - 13 Aug 2018

Bibliographical note

Publisher Copyright:
© 2018 Author(s).

NREL Publication Number

NREL/JA-5J00-71420

Keywords

electronic structure
gallium arsenide
III-V semiconductors
quantum theory
semiconducting gallium
semiconducting gallium arsenide
strain

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title = "Direct-to-Indirect Electronic State Transition in Dynamically Compressed GaAs Quantum Wells",

abstract = "Dynamic compression of GaAs quantum wells was achieved to examine the direct-to-indirect transition in a reduced dimension semiconductor structure under uniaxial strain conditions. Our results show that the transformation deviates significantly from the electronic structure predictions using bulk deformation potentials. This finding is attributed to the suppression of real-space type-II transitions by quantum state interactions due to the presence of large anisotropic strains.",

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AU - Geisz, J. F.

AU - Gupta, Y. M.

PY - 2018/8/13

Y1 - 2018/8/13

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AB - Dynamic compression of GaAs quantum wells was achieved to examine the direct-to-indirect transition in a reduced dimension semiconductor structure under uniaxial strain conditions. Our results show that the transformation deviates significantly from the electronic structure predictions using bulk deformation potentials. This finding is attributed to the suppression of real-space type-II transitions by quantum state interactions due to the presence of large anisotropic strains.

KW - electronic structure

KW - gallium arsenide

KW - III-V semiconductors

KW - quantum theory

KW - semiconducting gallium

KW - semiconducting gallium arsenide

KW - strain

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ER -

Direct-to-Indirect Electronic State Transition in Dynamically Compressed GaAs Quantum Wells

Abstract

Bibliographical note

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Keywords

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