Abstract
Epitaxial InAs/GaAs, GaAs/Ge/Si, GaAs/InP, and InAs/InP heterostructures are grown by molecular-beam epitaxy. Transmission electron microscopy studies reveal that, for these heteroepitaxial systems, the threading dislocation density is inversely proportional to the epilayer thickness. At a given thickness, the threading dislocation density is relatively insensitive to lattice mismatch (3.2%<∥Δa∥/a<7.2%), to differences in thermal expansion coefficients (6.9×10- 7<∥Δα∥<3.4×10-6 K -1), to interfacial surface chemistry, and to epilayer morphology. Epitaxial layers incorporating growth interrupts produce lower overall defect densities, yet they maintain defect-reduction profiles similar to those observed in layers without the growth interrupt.
Original language | American English |
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Pages (from-to) | 5609-5611 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 63 |
Issue number | 11 |
DOIs | |
State | Published - 1988 |
Bibliographical note
Work performed by Solar Energy Research Institute, Golden, Colorado, and GTE Laboratories, Waltham, MassachusettsNREL Publication Number
- ACNR/JA-213-10435