Dislocation Density Reduction through Annihilation in Lattice Mismatched Semiconductors Grown by Molecular Beam Epitaxy

P. Sheldon, K. M. Jones, M. M. Al-Jassim, B. G. Yacobi

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Abstract

Epitaxial InAs/GaAs, GaAs/Ge/Si, GaAs/InP, and InAs/InP heterostructures are grown by molecular-beam epitaxy. Transmission electron microscopy studies reveal that, for these heteroepitaxial systems, the threading dislocation density is inversely proportional to the epilayer thickness. At a given thickness, the threading dislocation density is relatively insensitive to lattice mismatch (3.2%<∥Δa∥/a<7.2%), to differences in thermal expansion coefficients (6.9×10- 7<∥Δα∥<3.4×10-6 K -1), to interfacial surface chemistry, and to epilayer morphology. Epitaxial layers incorporating growth interrupts produce lower overall defect densities, yet they maintain defect-reduction profiles similar to those observed in layers without the growth interrupt.

Original languageAmerican English
Pages (from-to)5609-5611
Number of pages3
JournalJournal of Applied Physics
Volume63
Issue number11
DOIs
StatePublished - 1988

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and GTE Laboratories, Waltham, Massachusetts

NREL Publication Number

  • ACNR/JA-213-10435

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