Dislocation Generation by Thermal Stresses in Si: Modeling and Experiments

Dislocation Generation by Thermal Stresses in Si: Modeling and Experiments

Research output: Contribution to conference › Paper

Abstract

We developed a finite-element modeling program to predict the thermally generated dislocation distribution in a wafer. This model uses measured parameters that are determined from generating dislocations under a known optical flux.

Original language	American English
Number of pages	5
State	Published - 2005
Event	2005 DOE Solar Energy Technologies Program Review Meeting - Denver, Colorado Duration: 7 Nov 2005 → 10 Nov 2005

Conference

Conference	2005 DOE Solar Energy Technologies Program Review Meeting
City	Denver, Colorado
Period	7/11/05 → 10/11/05

Bibliographical note

Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102006-2245; NREL/CD-520-38557)

NREL Publication Number

NREL/CP-520-38958

Keywords

dislocation generation
NREL
photovoltaics (PV)
PV
solar
thermal stresses in Si

Access to Document

https://www.nrel.gov/docs/fy06osti/38958.pdf

Cite this

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title = "Dislocation Generation by Thermal Stresses in Si: Modeling and Experiments",

abstract = "We developed a finite-element modeling program to predict the thermally generated dislocation distribution in a wafer. This model uses measured parameters that are determined from generating dislocations under a known optical flux.",

keywords = "dislocation generation, NREL, photovoltaics (PV), PV, solar, thermal stresses in Si",

author = "NREL",

note = "Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102006-2245; NREL/CD-520-38557); 2005 DOE Solar Energy Technologies Program Review Meeting ; Conference date: 07-11-2005 Through 10-11-2005",

year = "2005",

language = "American English",

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TY - CONF

T1 - Dislocation Generation by Thermal Stresses in Si: Modeling and Experiments

AU - NREL, null

N1 - Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102006-2245; NREL/CD-520-38557)

PY - 2005

Y1 - 2005

N2 - We developed a finite-element modeling program to predict the thermally generated dislocation distribution in a wafer. This model uses measured parameters that are determined from generating dislocations under a known optical flux.

AB - We developed a finite-element modeling program to predict the thermally generated dislocation distribution in a wafer. This model uses measured parameters that are determined from generating dislocations under a known optical flux.

KW - dislocation generation

KW - NREL

KW - photovoltaics (PV)

KW - PV

KW - solar

KW - thermal stresses in Si

M3 - Paper

T2 - 2005 DOE Solar Energy Technologies Program Review Meeting

Y2 - 7 November 2005 through 10 November 2005

ER -

Dislocation Generation by Thermal Stresses in Si: Modeling and Experiments

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

Access to Document

Fingerprint

Cite this