Dislocation-Limited Open Circuit Voltage in Film Crystal Silicon Solar Cells

Kirstin Alberi, Howard M. Branz, Harvey Guthrey, Manuel J. Romero, Ina T. Martin, Charles W. Teplin, Paul Stradins, David L. Young

Research output: Contribution to journalArticlepeer-review

7 Scopus Citations

Abstract

Carrier recombination at dislocations is a major source of efficiency loss in epitaxial film Si solar cells and significantly affects the open circuit voltage, V OC. We develop a simple empirical model that yields a logarithmic relationship between V OC and the dislocation density, which fits well to our data. Straightforward evaluation of device performance with this model provides qualitative information about the recombination activity at dislocations.

Original languageAmerican English
Article number123510
Number of pages4
JournalApplied Physics Letters
Volume101
Issue number12
DOIs
StatePublished - 17 Sep 2012

NREL Publication Number

  • NREL/JA-5200-56385

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