Abstract
Carrier recombination at dislocations is a major source of efficiency loss in epitaxial film Si solar cells and significantly affects the open circuit voltage, V OC. We develop a simple empirical model that yields a logarithmic relationship between V OC and the dislocation density, which fits well to our data. Straightforward evaluation of device performance with this model provides qualitative information about the recombination activity at dislocations.
Original language | American English |
---|---|
Article number | 123510 |
Number of pages | 4 |
Journal | Applied Physics Letters |
Volume | 101 |
Issue number | 12 |
DOIs | |
State | Published - 17 Sep 2012 |
NREL Publication Number
- NREL/JA-5200-56385