Dislocation Network at InN/GaN Interface Revealed by Scanning Tunneling Microscopy: Article No. 231907

Research output: Contribution to journal › Article › peer-review

NREL Publication Number

@article{85f33695a05f45f99c3e7ddf7e12cfd7,

title = "Dislocation Network at InN/GaN Interface Revealed by Scanning Tunneling Microscopy: Article No. 231907",

keywords = "epitaxy, misfit dislocations, scanning tunneling microscopy, surface states, surface strains, transmission electron microscopy",

author = "NREL",

year = "2008",

doi = "10.1063/1.2944145",

language = "American English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Dislocation Network at InN/GaN Interface Revealed by Scanning Tunneling Microscopy

T2 - Article No. 231907

AU - NREL, null

PY - 2008

Y1 - 2008

KW - epitaxy

KW - misfit dislocations

KW - scanning tunneling microscopy

KW - surface states

KW - surface strains

KW - transmission electron microscopy

U2 - 10.1063/1.2944145

DO - 10.1063/1.2944145

M3 - Article

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -