Dislocations as Sinks for Self-Interstitials in Gold Doped Float Zone Silicon

Dislocations as Sinks for Self-Interstitials in Gold Doped Float Zone Silicon

Research output: Contribution to conference › Paper

Original language	American English
Pages	81-86
Number of pages	6
State	Published - 1992
Event	Defect Engineering in Semiconductor Growth, Processing and Device Technology: Materials Research Society Symposium - San Francisco, California Duration: 26 Apr 1992 → 1 May 1992

Conference

Conference	Defect Engineering in Semiconductor Growth, Processing and Device Technology: Materials Research Society Symposium
City	San Francisco, California
Period	26/04/92 → 1/05/92

NREL Publication Number

ACNR/CP-14787

Cite this

@conference{391eff3ccd3744f5a0da8c565181cb00,

title = "Dislocations as Sinks for Self-Interstitials in Gold Doped Float Zone Silicon",

author = "NREL",

year = "1992",

language = "American English",

pages = "81--86",

note = "Defect Engineering in Semiconductor Growth, Processing and Device Technology: Materials Research Society Symposium ; Conference date: 26-04-1992 Through 01-05-1992",

}