Disorder-Tunable ZnGeP2 for Epitaxial Top Cells on Si

Adele Tamboli; Rekha Schnepf; John Mangum; Eric Toberer; Laura Schelhas

doi:10.1109/PVSC40753.2019.8980697

Disorder-Tunable ZnGeP2 for Epitaxial Top Cells on Si

Adele Tamboli, Rekha Schnepf, John Mangum, Eric Toberer, Laura Schelhas

SLAC National Accelerator Laboratory

Research output: Contribution to conference › Paper › peer-review

6 Scopus Citations

Abstract

There has been a longstanding search for top cell materials for Si-based tandems. ZnGeP₂ is one material that could fit this need. It is lattice matched to Si and has the potential for tuning its band gap at fixed lattice constant via cation ordering. In this study, we investigate the effects of growth and annealing conditions on the structure of ZnGeP₂ thin films. Films were deposited amorphous and then annealed ex-situ. Using low anneal temperatures or short anneal times, we were able to kinetically trap the disordered phase. We also found composition to play a role in the degree of ordering in our films. Our findings support the hypothesis that ZnGeP₂ could be implemented as a material with tunable properties at fixed lattice constant through cation ordering.

Original language	American English
Pages	1052-1055
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC40753.2019.8980697 https://doi.org/10.1109/PVSC40753.2019.8980697
State	Published - Jun 2019
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	16/06/19 → 21/06/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

NREL Publication Number

NREL/CP-5K00-74067

Keywords

cation ordering
mul-tijunction solar cells
optoelectronics
polycrystalline thin films

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abstract = "There has been a longstanding search for top cell materials for Si-based tandems. ZnGeP2 is one material that could fit this need. It is lattice matched to Si and has the potential for tuning its band gap at fixed lattice constant via cation ordering. In this study, we investigate the effects of growth and annealing conditions on the structure of ZnGeP2 thin films. Films were deposited amorphous and then annealed ex-situ. Using low anneal temperatures or short anneal times, we were able to kinetically trap the disordered phase. We also found composition to play a role in the degree of ordering in our films. Our findings support the hypothesis that ZnGeP2 could be implemented as a material with tunable properties at fixed lattice constant through cation ordering.",

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AU - Schnepf, Rekha

AU - Mangum, John

AU - Toberer, Eric

AU - Schelhas, Laura

PY - 2019/6

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AB - There has been a longstanding search for top cell materials for Si-based tandems. ZnGeP2 is one material that could fit this need. It is lattice matched to Si and has the potential for tuning its band gap at fixed lattice constant via cation ordering. In this study, we investigate the effects of growth and annealing conditions on the structure of ZnGeP2 thin films. Films were deposited amorphous and then annealed ex-situ. Using low anneal temperatures or short anneal times, we were able to kinetically trap the disordered phase. We also found composition to play a role in the degree of ordering in our films. Our findings support the hypothesis that ZnGeP2 could be implemented as a material with tunable properties at fixed lattice constant through cation ordering.

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KW - polycrystalline thin films

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Disorder-Tunable ZnGeP2 for Epitaxial Top Cells on Si

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

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