Abstract
the chemical state and distribution of Cu-rich clusters were determined in four different silicon-based materials with varying contamination pathways and degrees of oxygen concentration, including as-grown multicrystalline silicon. In all four samples, Cu3Si was the only chemical state observed. Cu3Si clusters were observed at structural defects within all four materials; XBIC measurementsrevealed that the presence of Cu3Si corresponds to increased recombination activity. Oxidized Cu compounds are not likely to form in silicon. The +1 eV edge shift in the ?-XAS absorption spectrum of Cu3Si relative to Cu metal is believed to be an indication of a degree of covalent bonding between Cu atoms and their silicon neighbors.
Original language | American English |
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Number of pages | 7 |
State | Published - 2004 |
Event | 14th Workshop on Crystalline Silicon Solar Cells and Modules - Winter Park, Colorado Duration: 8 Aug 2004 → 11 Aug 2004 |
Conference
Conference | 14th Workshop on Crystalline Silicon Solar Cells and Modules |
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City | Winter Park, Colorado |
Period | 8/08/04 → 11/08/04 |
NREL Publication Number
- NREL/CP-520-36748
Keywords
- crystal growth
- crystalline silicon (x-Si) (c-Si)
- defects
- device process
- impurities
- materials and processes
- microelectronics
- module
- passivation
- photovoltaics (PV)
- PV
- solar cells