Distribution and Chemical State of Cu-rich Clusters in Silicon: Preprint

    Research output: Contribution to conferencePaper

    Abstract

    the chemical state and distribution of Cu-rich clusters were determined in four different silicon-based materials with varying contamination pathways and degrees of oxygen concentration, including as-grown multicrystalline silicon. In all four samples, Cu3Si was the only chemical state observed. Cu3Si clusters were observed at structural defects within all four materials; XBIC measurementsrevealed that the presence of Cu3Si corresponds to increased recombination activity. Oxidized Cu compounds are not likely to form in silicon. The +1 eV edge shift in the ?-XAS absorption spectrum of Cu3Si relative to Cu metal is believed to be an indication of a degree of covalent bonding between Cu atoms and their silicon neighbors.
    Original languageAmerican English
    Number of pages7
    StatePublished - 2004
    Event14th Workshop on Crystalline Silicon Solar Cells and Modules - Winter Park, Colorado
    Duration: 8 Aug 200411 Aug 2004

    Conference

    Conference14th Workshop on Crystalline Silicon Solar Cells and Modules
    CityWinter Park, Colorado
    Period8/08/0411/08/04

    NREL Publication Number

    • NREL/CP-520-36748

    Keywords

    • crystal growth
    • crystalline silicon (x-Si) (c-Si)
    • defects
    • device process
    • impurities
    • materials and processes
    • microelectronics
    • module
    • passivation
    • photovoltaics (PV)
    • PV
    • solar cells

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