Distribution of Nitrogen Atoms in Dilute GaAsN and InGaAsN Alloys Studied by Scanning Tunneling Microscopy

H. A. McKay, R. M. Feenstra, T. Schmidtling, U. W. Pohl, J. F. Geisz

Research output: Contribution to journalArticlepeer-review

27 Scopus Citations

Abstract

N defects in GaAsN and InGaAsN alloys were studied by STM. Statistical analysis of the positions of N defect showed that N has a fairly uniform distribution within the layer. STM and STS results from annealed and as-grown samples were found to be consistent with this result.

Original languageAmerican English
Pages (from-to)1644-1649
Number of pages6
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume19
Issue number4
DOIs
StatePublished - 2001
Event19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States
Duration: 15 Oct 200018 Oct 2000

NREL Publication Number

  • NREL/JA-520-31108

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