Abstract
N defects in GaAsN and InGaAsN alloys were studied by STM. Statistical analysis of the positions of N defect showed that N has a fairly uniform distribution within the layer. STM and STS results from annealed and as-grown samples were found to be consistent with this result.
Original language | American English |
---|---|
Pages (from-to) | 1644-1649 |
Number of pages | 6 |
Journal | Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics |
Volume | 19 |
Issue number | 4 |
DOIs | |
State | Published - 2001 |
Event | 19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States Duration: 15 Oct 2000 → 18 Oct 2000 |
NREL Publication Number
- NREL/JA-520-31108