Distribution of Nitrogen Atoms in Dilute GaAsN and InGaAsN Alloys Studied by Scanning Tunneling Microscopy

H. A. McKay; R. M. Feenstra; T. Schmidtling; U. W. Pohl; J. F. Geisz

doi:10.1116/1.1379967

Distribution of Nitrogen Atoms in Dilute GaAsN and InGaAsN Alloys Studied by Scanning Tunneling Microscopy

H. A. McKay
, R. M. Feenstra
, T. Schmidtling
, U. W. Pohl
, J. F. Geisz

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

27 Scopus Citations

Abstract

N defects in GaAsN and InGaAsN alloys were studied by STM. Statistical analysis of the positions of N defect showed that N has a fairly uniform distribution within the layer. STM and STS results from annealed and as-grown samples were found to be consistent with this result.

Original language	American English
Pages (from-to)	1644-1649
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	19
Issue number	4
DOIs	https://doi.org/10.1116/1.1379967 https://doi.org/10.1116/1.1379967
State	Published - 2001
Event	19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States Duration: 15 Oct 2000 → 18 Oct 2000

NLR Publication Number

NREL/JA-520-31108

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title = "Distribution of Nitrogen Atoms in Dilute GaAsN and InGaAsN Alloys Studied by Scanning Tunneling Microscopy",

abstract = "N defects in GaAsN and InGaAsN alloys were studied by STM. Statistical analysis of the positions of N defect showed that N has a fairly uniform distribution within the layer. STM and STS results from annealed and as-grown samples were found to be consistent with this result.",

author = "McKay, \{H. A.\} and Feenstra, \{R. M.\} and T. Schmidtling and Pohl, \{U. W.\} and Geisz, \{J. F.\}",

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pages = "1644--1649",

journal = "Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics",

issn = "2166-2746",

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T1 - Distribution of Nitrogen Atoms in Dilute GaAsN and InGaAsN Alloys Studied by Scanning Tunneling Microscopy

AU - McKay, H. A.

AU - Feenstra, R. M.

AU - Schmidtling, T.

AU - Pohl, U. W.

AU - Geisz, J. F.

PY - 2001

Y1 - 2001

N2 - N defects in GaAsN and InGaAsN alloys were studied by STM. Statistical analysis of the positions of N defect showed that N has a fairly uniform distribution within the layer. STM and STS results from annealed and as-grown samples were found to be consistent with this result.

AB - N defects in GaAsN and InGaAsN alloys were studied by STM. Statistical analysis of the positions of N defect showed that N has a fairly uniform distribution within the layer. STM and STS results from annealed and as-grown samples were found to be consistent with this result.

UR - https://www.scopus.com/pages/publications/0035535374

U2 - 10.1116/1.1379967

DO - 10.1116/1.1379967

M3 - Article

AN - SCOPUS:0035535374

SN - 2166-2746

VL - 19

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JO - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

IS - 4

T2 - 19th North American Conference on Molecular Beam Epitaxy (NAMBE-19)

Y2 - 15 October 2000 through 18 October 2000

ER -

Distribution of Nitrogen Atoms in Dilute GaAsN and InGaAsN Alloys Studied by Scanning Tunneling Microscopy

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