DLTS Analysis of Radiation-Induced Defects in InGaAsN Solar Cell Structures

Aurangzeb Khan; J. Gou; Ravi C. Lam; Sarah R. Kurtz; S. W. Johnston; M. Imazumi; M. Yamaguchi

doi:10.1109/WCPEC.2006.279856

DLTS Analysis of Radiation-Induced Defects in InGaAsN Solar Cell Structures

Aurangzeb Khan, J. Gou, Ravi C. Lam, Sarah R. Kurtz, S. W. Johnston, M. Imazumi, M. Yamaguchi

Materials Science

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

We present the direct observation of majority and minority carrier defects in InGaAsN diodes and solar cells before and after 1-MeV electron irradiation by Deep Level Transient Spectroscopy (DLTS). A hitherto existing nitrogen-related electron trap, E1, (0.20 eV) shows a significant increase in concentration after 1-MeV electron irradiation. In addition, 1-MeV electron irradiation induced a hole trap, H1, at energy of about 0.75 eV above the valence band. Isothermal annealing analysis indicates that E1 is a complex defect involving an interstitial or a substitutional atom in combination with some other defect, whose concentration is enhanced by irradiation. The recovery of the free carrier concentration following the recovery of the E1 level upon annealing indicates that the E1 center is an acceptor-like center.

Original language	American English
Pages	1858-1860
Number of pages	3
DOIs	https://doi.org/10.1109/WCPEC.2006.279856
State	Published - 2006
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: 7 May 2006 → 12 May 2006

Conference

Conference	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/Territory	United States
City	Waikoloa, HI
Period	7/05/06 → 12/05/06

NREL Publication Number

NREL/CP-520-39950

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/WCPEC.2006.279856

Cite this

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title = "DLTS Analysis of Radiation-Induced Defects in InGaAsN Solar Cell Structures",

abstract = "We present the direct observation of majority and minority carrier defects in InGaAsN diodes and solar cells before and after 1-MeV electron irradiation by Deep Level Transient Spectroscopy (DLTS). A hitherto existing nitrogen-related electron trap, E1, (0.20 eV) shows a significant increase in concentration after 1-MeV electron irradiation. In addition, 1-MeV electron irradiation induced a hole trap, H1, at energy of about 0.75 eV above the valence band. Isothermal annealing analysis indicates that E1 is a complex defect involving an interstitial or a substitutional atom in combination with some other defect, whose concentration is enhanced by irradiation. The recovery of the free carrier concentration following the recovery of the E1 level upon annealing indicates that the E1 center is an acceptor-like center.",

author = "Aurangzeb Khan and J. Gou and Lam, {Ravi C.} and Kurtz, {Sarah R.} and Johnston, {S. W.} and M. Imazumi and M. Yamaguchi",

year = "2006",

doi = "10.1109/WCPEC.2006.279856",

language = "American English",

pages = "1858--1860",

note = "2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 ; Conference date: 07-05-2006 Through 12-05-2006",

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T1 - DLTS Analysis of Radiation-Induced Defects in InGaAsN Solar Cell Structures

AU - Khan, Aurangzeb

AU - Gou, J.

AU - Lam, Ravi C.

AU - Kurtz, Sarah R.

AU - Johnston, S. W.

AU - Imazumi, M.

AU - Yamaguchi, M.

PY - 2006

Y1 - 2006

N2 - We present the direct observation of majority and minority carrier defects in InGaAsN diodes and solar cells before and after 1-MeV electron irradiation by Deep Level Transient Spectroscopy (DLTS). A hitherto existing nitrogen-related electron trap, E1, (0.20 eV) shows a significant increase in concentration after 1-MeV electron irradiation. In addition, 1-MeV electron irradiation induced a hole trap, H1, at energy of about 0.75 eV above the valence band. Isothermal annealing analysis indicates that E1 is a complex defect involving an interstitial or a substitutional atom in combination with some other defect, whose concentration is enhanced by irradiation. The recovery of the free carrier concentration following the recovery of the E1 level upon annealing indicates that the E1 center is an acceptor-like center.

AB - We present the direct observation of majority and minority carrier defects in InGaAsN diodes and solar cells before and after 1-MeV electron irradiation by Deep Level Transient Spectroscopy (DLTS). A hitherto existing nitrogen-related electron trap, E1, (0.20 eV) shows a significant increase in concentration after 1-MeV electron irradiation. In addition, 1-MeV electron irradiation induced a hole trap, H1, at energy of about 0.75 eV above the valence band. Isothermal annealing analysis indicates that E1 is a complex defect involving an interstitial or a substitutional atom in combination with some other defect, whose concentration is enhanced by irradiation. The recovery of the free carrier concentration following the recovery of the E1 level upon annealing indicates that the E1 center is an acceptor-like center.

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DO - 10.1109/WCPEC.2006.279856

M3 - Paper

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EP - 1860

T2 - 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Y2 - 7 May 2006 through 12 May 2006

ER -

DLTS Analysis of Radiation-Induced Defects in InGaAsN Solar Cell Structures

Abstract

Conference

NREL Publication Number

UN SDGs

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