DLTS Characterization of CIGS Cells

Research output: Contribution to conferencePaper

Abstract

Deep Level Transient Spectroscopy (DLTS) and Capacitance-Voltage (C-V) measurements are employed to study deep-level electron and hole traps in CIGS solar cells fabricated at two different locations (EPV and NREL). The activation energy and trap density as well as suggested defect origins are given.
Original languageAmerican English
Number of pages4
StatePublished - 2003
EventNCPV and Solar Program Review Meeting - Denver, Colorado
Duration: 24 Mar 200326 Mar 2003

Conference

ConferenceNCPV and Solar Program Review Meeting
CityDenver, Colorado
Period24/03/0326/03/03

NREL Publication Number

  • NREL/CP-520-35644

Keywords

  • capacitance voltage (CV)
  • deep level transient spectroscopy (DLTS)
  • thin films

Fingerprint

Dive into the research topics of 'DLTS Characterization of CIGS Cells'. Together they form a unique fingerprint.

Cite this