DLTS Characterization of CIGS Cells

    Research output: Contribution to conferencePaper

    Abstract

    Deep Level Transient Spectroscopy (DLTS) and Capacitance-Voltage (C-V) measurements are employed to study deep-level electron and hole traps in CIGS solar cells fabricated at two different locations (EPV and NREL). The activation energy and trap density as well as suggested defect origins are given.
    Original languageAmerican English
    Number of pages4
    StatePublished - 2003
    EventNCPV and Solar Program Review Meeting - Denver, Colorado
    Duration: 24 Mar 200326 Mar 2003

    Conference

    ConferenceNCPV and Solar Program Review Meeting
    CityDenver, Colorado
    Period24/03/0326/03/03

    NREL Publication Number

    • NREL/CP-520-35644

    Keywords

    • capacitance voltage (CV)
    • deep level transient spectroscopy (DLTS)
    • thin films

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