Abstract
Deep Level Transient Spectroscopy (DLTS) and Capacitance-Voltage (C-V) measurements are employed to study deep-level electron and hole traps in CIGS solar cells fabricated at two different locations (EPV and NREL). The activation energy and trap density as well as suggested defect origins are given.
Original language | American English |
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Number of pages | 4 |
State | Published - 2003 |
Event | NCPV and Solar Program Review Meeting - Denver, Colorado Duration: 24 Mar 2003 → 26 Mar 2003 |
Conference
Conference | NCPV and Solar Program Review Meeting |
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City | Denver, Colorado |
Period | 24/03/03 → 26/03/03 |
NREL Publication Number
- NREL/CP-520-35644
Keywords
- capacitance voltage (CV)
- deep level transient spectroscopy (DLTS)
- thin films