Do Grain Boundaries Assist S Diffusion in Polycrystalline CdS/CdTe Heterojunctions?

Y. Yan, D. Albin, M. M. Al-Jassim

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49 Scopus Citations

Abstract

We report on a transmission electron microscopy and energy-dispersive x-ray spectroscopy study of S diffusion in polycrystalline CdS/CdTe heterojunctions. We find that grain boundaries significantly assist S diffusion in the CdTe layer when the CdTe is grown without the presence of oxygen, i.e., the S diffuses more easily along the grain boundaries than in the grains. However, grain boundaries do not enhance the S diffusion in CdTe when it is grown in the presence of oxygen. The reason is likely to be the formation of Cd-O bonds at the grain boundaries, which are resistance to the S diffusion.

Original languageAmerican English
Pages (from-to)171-173
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number2
DOIs
StatePublished - 2001

NREL Publication Number

  • NREL/JA-520-29006

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