Does The Local Built-In Potential on Grain Boundaries of Cu(In,Ga)Se2 Thin Films Benefit Photovoltaic Performance of the Device?

C. S. Jiang, R. Noufi, K. Ramanathan, J. A. AbuShama, H. R. Moutinho, M. M. Al-Jassim

Research output: Contribution to journalArticlepeer-review

150 Scopus Citations

Abstract

The benefit of local built-in potential on grain boundaries of voltaic Cu(In, Ga)Se 2 (CIGS) thin films in photoconversion efficiency of the device was described. It was found that the band gap of CIGS can be tuned from 1.01 to 1.68 eV by adjusting the Ga/(In+Ga) from 0% to 100%. It was also found that the Ga content of ∼65% provides the optimal band-gap value for optimal conversion efficiency. The built-in potential on the GB plays a significant role in the device conversion efficeincy of NREL's three-stage CIGS device.

Original languageAmerican English
Pages (from-to)2625-2627
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number13
DOIs
StatePublished - 27 Sep 2004

NREL Publication Number

  • NREL/JA-520-36259

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