Does The Local Built-In Potential on Grain Boundaries of Cu(In,Ga)Se2 Thin Films Benefit Photovoltaic Performance of the Device?

C. S. Jiang; R. Noufi; K. Ramanathan; J. A. AbuShama; H. R. Moutinho; M. M. Al-Jassim

doi:10.1063/1.1793346

Does The Local Built-In Potential on Grain Boundaries of Cu(In,Ga)Se2 Thin Films Benefit Photovoltaic Performance of the Device?

C. S. Jiang, R. Noufi, K. Ramanathan, J. A. AbuShama, H. R. Moutinho, M. M. Al-Jassim

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

151 Scopus Citations

Abstract

The benefit of local built-in potential on grain boundaries of voltaic Cu(In, Ga)Se ₂ (CIGS) thin films in photoconversion efficiency of the device was described. It was found that the band gap of CIGS can be tuned from 1.01 to 1.68 eV by adjusting the Ga/(In+Ga) from 0% to 100%. It was also found that the Ga content of ∼65% provides the optimal band-gap value for optimal conversion efficiency. The built-in potential on the GB plays a significant role in the device conversion efficeincy of NREL's three-stage CIGS device.

Original language	American English
Pages (from-to)	2625-2627
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	13
DOIs	https://doi.org/10.1063/1.1793346 https://doi.org/10.1063/1.1793346
State	Published - 27 Sep 2004

NREL Publication Number

NREL/JA-520-36259

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Cite this

@article{cff90cc01cb54ae4ad894f60b15407b1,

title = "Does The Local Built-In Potential on Grain Boundaries of Cu(In,Ga)Se2 Thin Films Benefit Photovoltaic Performance of the Device?",

abstract = "The benefit of local built-in potential on grain boundaries of voltaic Cu(In, Ga)Se 2 (CIGS) thin films in photoconversion efficiency of the device was described. It was found that the band gap of CIGS can be tuned from 1.01 to 1.68 eV by adjusting the Ga/(In+Ga) from 0% to 100%. It was also found that the Ga content of ∼65% provides the optimal band-gap value for optimal conversion efficiency. The built-in potential on the GB plays a significant role in the device conversion efficeincy of NREL's three-stage CIGS device.",

author = "Jiang, {C. S.} and R. Noufi and K. Ramanathan and AbuShama, {J. A.} and Moutinho, {H. R.} and Al-Jassim, {M. M.}",

year = "2004",

month = sep,

day = "27",

doi = "10.1063/1.1793346",

language = "American English",

volume = "85",

pages = "2625--2627",

journal = "Applied Physics Letters",

issn = "0003-6951",