Dominant Recombination Centers in Ga(In)NAs Alloys: Ga Interstitials

X. J. Wang, Y. Puttisong, C. W. Tu, Aaron J. Ptak, V. K. Kalevich, A. Yu Egorov, L. Geelhaar, H. Riechert, W. M. Chen, I. A. Buyanova

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Optically detected magnetic resonance measurements are carried out to study formation of Ga interstitial-related defects in Ga(In)NAs alloys. The defects, which are among dominant nonradiative recombination centers that control carrier lifetime in Ga(In)NAs, are unambiguously proven to be common grown-in defects in these alloys independent of the employed growth methods. The defects formation is suggested to become thermodynamically favorable because of the presence of nitrogen, possibly due to local strain compensation.

Original languageAmerican English
Article number241904
Number of pages3
JournalApplied Physics Letters
Issue number24
StatePublished - 2009

NREL Publication Number

  • NREL/JA-520-47555


  • defects
  • Ga(IN)NA alloys
  • solar


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