Dominant Recombination Centers in Ga(In)NAs Alloys: Ga Interstitials

X. J. Wang; Y. Puttisong; C. W. Tu; Aaron J. Ptak; V. K. Kalevich; A. Yu Egorov; L. Geelhaar; H. Riechert; W. M. Chen; I. A. Buyanova

doi:10.1063/1.3275703

Dominant Recombination Centers in Ga(In)NAs Alloys: Ga Interstitials

X. J. Wang
, Y. Puttisong
, C. W. Tu
, Aaron J. Ptak
, V. K. Kalevich
, A. Yu Egorov
, L. Geelhaar
, H. Riechert
, W. M. Chen
, I. A. Buyanova

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

60 Scopus Citations

Abstract

Optically detected magnetic resonance measurements are carried out to study formation of Ga interstitial-related defects in Ga(In)NAs alloys. The defects, which are among dominant nonradiative recombination centers that control carrier lifetime in Ga(In)NAs, are unambiguously proven to be common grown-in defects in these alloys independent of the employed growth methods. The defects formation is suggested to become thermodynamically favorable because of the presence of nitrogen, possibly due to local strain compensation.

Original language	American English
Article number	241904
Number of pages	3
Journal	Applied Physics Letters
Volume	95
Issue number	24
DOIs	https://doi.org/10.1063/1.3275703 https://doi.org/10.1063/1.3275703
State	Published - 2009

NLR Publication Number

NREL/JA-520-47555

Keywords

defects
Ga(IN)NA alloys
solar

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@article{15b925a64fe24d5a94c02109c348133c,

title = "Dominant Recombination Centers in Ga(In)NAs Alloys: Ga Interstitials",

abstract = "Optically detected magnetic resonance measurements are carried out to study formation of Ga interstitial-related defects in Ga(In)NAs alloys. The defects, which are among dominant nonradiative recombination centers that control carrier lifetime in Ga(In)NAs, are unambiguously proven to be common grown-in defects in these alloys independent of the employed growth methods. The defects formation is suggested to become thermodynamically favorable because of the presence of nitrogen, possibly due to local strain compensation.",

keywords = "defects, Ga(IN)NA alloys, solar",

author = "Wang, \{X. J.\} and Y. Puttisong and Tu, \{C. W.\} and Ptak, \{Aaron J.\} and Kalevich, \{V. K.\} and Egorov, \{A. Yu\} and L. Geelhaar and H. Riechert and Chen, \{W. M.\} and Buyanova, \{I. A.\}",

year = "2009",

doi = "10.1063/1.3275703",

language = "American English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

}

TY - JOUR

T1 - Dominant Recombination Centers in Ga(In)NAs Alloys: Ga Interstitials

AU - Wang, X. J.

AU - Puttisong, Y.

AU - Tu, C. W.

AU - Ptak, Aaron J.

AU - Kalevich, V. K.

AU - Egorov, A. Yu

AU - Geelhaar, L.

AU - Riechert, H.

AU - Chen, W. M.

AU - Buyanova, I. A.

PY - 2009

Y1 - 2009

N2 - Optically detected magnetic resonance measurements are carried out to study formation of Ga interstitial-related defects in Ga(In)NAs alloys. The defects, which are among dominant nonradiative recombination centers that control carrier lifetime in Ga(In)NAs, are unambiguously proven to be common grown-in defects in these alloys independent of the employed growth methods. The defects formation is suggested to become thermodynamically favorable because of the presence of nitrogen, possibly due to local strain compensation.

AB - Optically detected magnetic resonance measurements are carried out to study formation of Ga interstitial-related defects in Ga(In)NAs alloys. The defects, which are among dominant nonradiative recombination centers that control carrier lifetime in Ga(In)NAs, are unambiguously proven to be common grown-in defects in these alloys independent of the employed growth methods. The defects formation is suggested to become thermodynamically favorable because of the presence of nitrogen, possibly due to local strain compensation.

KW - defects

KW - Ga(IN)NA alloys

KW - solar

UR - https://www.scopus.com/pages/publications/77956155396

U2 - 10.1063/1.3275703

DO - 10.1063/1.3275703

M3 - Article

AN - SCOPUS:77956155396

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 241904

ER -

Dominant Recombination Centers in Ga(In)NAs Alloys: Ga Interstitials

Abstract

NLR Publication Number

Keywords

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