Abstract
Doping activity in both beta-phase (β-) and amorphous (a-) Sn-doped gallium oxide (Ga2O3:Sn) is investigated by X-ray absorption spectroscopy (XAS). A single crystal of β-Ga2O3:Sn grown using edge-defined film-fed growth at 1725°C is compared with amorphous Ga2O3:Sn films deposited at low temperature (<300°C). Our XAS analyses indicate that activated Sn dopant atoms in conductive single crystal β-Ga2O3:Sn are present as Sn4+, preferentially substituting for Ga at the octahedral site, as predicted by theoretical calculations. In contrast, inactive Sn atoms in resistive a-Ga2O3:Sn are present in either +2 or +4 charge states depending on growth conditions. These observations suggest the importance of growing Ga2O3:Sn at high temperature to obtain a crystalline phase and controlling the oxidation state of Sn during growth to achieve dopant activation.
Original language | American English |
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Article number | Article No. 252103 |
Number of pages | 5 |
Journal | Applied Physics Letters |
Volume | 107 |
Issue number | 25 |
DOIs | |
State | Published - 21 Dec 2015 |
Bibliographical note
Publisher Copyright:© 2015 AIP Publishing LLC.
NREL Publication Number
- NREL/JA-5K00-65774
Keywords
- atomic layer deposition
- doping
- pulsed laser deposition
- x-ray absorption near edge structure
- x-ray absorption spectroscopy