Dopant Diffusion Control for Improved Tandem Cells Grown by D-HVPE

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3 Scopus Citations


GaInP top cell current-density presently limits the performance of HVPE-grown two-junction devices, in large part due to unwanted dopant diffusion. Here, we institute mitigation strategies to lower the diffusion of dopants from both the front contact and back surface field. Successful application of these strategies resulted in a short-circuit current density of 12.1 mA/cm2 in a GaInP/GaAs cell, an improvement of 0.9 mA/cm2 over our previous best cell. The reduced Se diffusion results in a thinner unpassivated emitter, which can lead to higher series resistance. Despite the increased resistance we obtained an efficiency increase from 23.7% to 24.8%.

Original languageAmerican English
Article number9497512
Pages (from-to)1251-1255
Number of pages5
JournalIEEE Journal of Photovoltaics
Issue number5
StatePublished - Sep 2021

Bibliographical note

Publisher Copyright:
© 2011-2012 IEEE.

NREL Publication Number

  • NREL/JA-5900-79561


  • hydride vapor phase epitaxy (HVPE)
  • III-V
  • tandem devices


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