Dopant Diffusion Control for Improved Tandem Cells Grown by D-HVPE

Dennice Roberts; John Simon; Kevin Schulte; Matthew Young; Aaron Ptak

doi:10.1109/jphotov.2021.3095756

Dopant Diffusion Control for Improved Tandem Cells Grown by D-HVPE

Dennice Roberts, John Simon, Kevin Schulte, Matthew Young, Aaron Ptak

Research output: Contribution to journal › Article › peer-review

3 Scopus Citations

Abstract

GaInP top cell current-density presently limits the performance of HVPE-grown two-junction devices, in large part due to unwanted dopant diffusion. Here, we institute mitigation strategies to lower the diffusion of dopants from both the front contact and back surface field. Successful application of these strategies resulted in a short-circuit current density of 12.1 mA/cm2 in a GaInP/GaAs cell, an improvement of 0.9 mA/cm2 over our previous best cell. The reduced Se diffusion results in a thinner unpassivated emitter, which can lead to higher series resistance. Despite the increased resistance we obtained an efficiency increase from 23.7% to 24.8%.

Original language	American English
Article number	9497512
Pages (from-to)	1251-1255
Number of pages	5
Journal	IEEE Journal of Photovoltaics
Volume	11
Issue number	5
DOIs	https://doi.org/10.1109/jphotov.2021.3095756 https://doi.org/10.1109/JPHOTOV.2021.3095756
State	Published - Sep 2021

Bibliographical note

Publisher Copyright:
© 2011-2012 IEEE.

NREL Publication Number

NREL/JA-5900-79561

Keywords

hydride vapor phase epitaxy (HVPE)
III-V
tandem devices

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title = "Dopant Diffusion Control for Improved Tandem Cells Grown by D-HVPE",

abstract = "GaInP top cell current-density presently limits the performance of HVPE-grown two-junction devices, in large part due to unwanted dopant diffusion. Here, we institute mitigation strategies to lower the diffusion of dopants from both the front contact and back surface field. Successful application of these strategies resulted in a short-circuit current density of 12.1 mA/cm2 in a GaInP/GaAs cell, an improvement of 0.9 mA/cm2 over our previous best cell. The reduced Se diffusion results in a thinner unpassivated emitter, which can lead to higher series resistance. Despite the increased resistance we obtained an efficiency increase from 23.7% to 24.8%.",

keywords = "hydride vapor phase epitaxy (HVPE), III-V, tandem devices",

author = "Dennice Roberts and John Simon and Kevin Schulte and Matthew Young and Aaron Ptak",

note = "Publisher Copyright: {\textcopyright} 2011-2012 IEEE.",

year = "2021",

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doi = "10.1109/jphotov.2021.3095756",

language = "American English",

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T1 - Dopant Diffusion Control for Improved Tandem Cells Grown by D-HVPE

AU - Roberts, Dennice

AU - Simon, John

AU - Schulte, Kevin

AU - Young, Matthew

AU - Ptak, Aaron

PY - 2021/9

Y1 - 2021/9

N2 - GaInP top cell current-density presently limits the performance of HVPE-grown two-junction devices, in large part due to unwanted dopant diffusion. Here, we institute mitigation strategies to lower the diffusion of dopants from both the front contact and back surface field. Successful application of these strategies resulted in a short-circuit current density of 12.1 mA/cm2 in a GaInP/GaAs cell, an improvement of 0.9 mA/cm2 over our previous best cell. The reduced Se diffusion results in a thinner unpassivated emitter, which can lead to higher series resistance. Despite the increased resistance we obtained an efficiency increase from 23.7% to 24.8%.

AB - GaInP top cell current-density presently limits the performance of HVPE-grown two-junction devices, in large part due to unwanted dopant diffusion. Here, we institute mitigation strategies to lower the diffusion of dopants from both the front contact and back surface field. Successful application of these strategies resulted in a short-circuit current density of 12.1 mA/cm2 in a GaInP/GaAs cell, an improvement of 0.9 mA/cm2 over our previous best cell. The reduced Se diffusion results in a thinner unpassivated emitter, which can lead to higher series resistance. Despite the increased resistance we obtained an efficiency increase from 23.7% to 24.8%.

KW - hydride vapor phase epitaxy (HVPE)

KW - III-V

KW - tandem devices

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M3 - Article

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JO - IEEE Journal of Photovoltaics

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Dopant Diffusion Control for Improved Tandem Cells Grown by D-HVPE

Abstract

Bibliographical note

NREL Publication Number

Keywords

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