Dopant Patterning by PECVD and Mechanical Masking for Passivated Tunneling Contact IBC Cell Architectures

William Nemeth, Vincenzo LaSalvia, Abhijit Kale, Pauls Stradins

Research output: Contribution to conferencePaper

Abstract

We present a robust, simple technique for dopant patterning onto poly-Si/SiO 2 passivated tunneling contacts on nCz wafers. Heavily doped, thin nand ptype a-Si:H overlayers serve as solid-state dopant sources for blanket intrinsic a-Si:H layer on tunneling SiO 2 . Subsequent processing results in uniformly doped, functional n- and p-type passivated contacts. Furthermore, physical masking during the PECVD of the dopant source overlayers enables an interdigitated back contact (IBC) cell structure with sufficient doped finger edge fidelity to preserve an intrinsic electrode gap. Lithography-free, passivated contact IBC cell structures are made using a set of n-, p-, and metallization masks from patterned Si wafers with mechanical alignment. Alternatively, doped a-Si:H overlayers are patterned by dielectric layer deposition and lithography.
Original languageAmerican English
Pages1801-1803
Number of pages3
DOIs
StatePublished - 2018
Event2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) - Washington, D.C.
Duration: 25 Jun 201730 Jun 2017

Conference

Conference2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
CityWashington, D.C.
Period25/06/1730/06/17

NREL Publication Number

  • NREL/CP-5900-67894

Keywords

  • passivated contact
  • polysilicon
  • silicon

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