Doped Bi-Se Thin Films for Photovoltaic Applications

Sovannary Phok; Philip Parilla; Rajeev N. Kini; Raghu Bhattacharya; Bobby To; Joel Pankow

doi:10.1109/PVSC.2010.5614519

Doped Bi-Se Thin Films for Photovoltaic Applications

Sovannary Phok, Philip Parilla, Rajeev N. Kini, Raghu Bhattacharya, Bobby To, Joel Pankow

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

Cu_xBi_ySe_z thin films with copper concentration x up to 29 mol. % are synthesized on glass substrates by chemical-bath deposition. Films with thickness in the range of 550-597 nm are fabricated by a multiple-dip process. Deposition parameters for a single-coating run are optimized to avoid re-dissolution of the particles, and to obtain large-area composition homogeneity in the films. Routine film composition Cu:Bi:Se and thickness are analyzed by X-ray fluorescence. To evaluate the doped Bi-Se thin films for potential use in photovoltaic devices, systematic investigations of the films' structural, morphological, optical, and electrical properties are performed. The physical properties of as-deposited and annealed films are analyzed by X-ray diffraction, scanning electron microscopy, UV-Vis-IR photospectroscopy, and Hall effect and Seebeck effect measurements.

Original language	American English
Pages	2946-2951
Number of pages	6
DOIs	https://doi.org/10.1109/PVSC.2010.5614519 https://doi.org/10.1109/PVSC.2010.5614519
State	Published - 2010
Event	35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: 20 Jun 2010 → 25 Jun 2010

Conference

Conference	35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/Territory	United States
City	Honolulu, HI
Period	20/06/10 → 25/06/10

NREL Publication Number

NREL/CP-520-47726

Keywords

solar photovoltaics
thin-film solar cells

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title = "Doped Bi-Se Thin Films for Photovoltaic Applications",

abstract = "CuxBiySez thin films with copper concentration x up to 29 mol. % are synthesized on glass substrates by chemical-bath deposition. Films with thickness in the range of 550-597 nm are fabricated by a multiple-dip process. Deposition parameters for a single-coating run are optimized to avoid re-dissolution of the particles, and to obtain large-area composition homogeneity in the films. Routine film composition Cu:Bi:Se and thickness are analyzed by X-ray fluorescence. To evaluate the doped Bi-Se thin films for potential use in photovoltaic devices, systematic investigations of the films' structural, morphological, optical, and electrical properties are performed. The physical properties of as-deposited and annealed films are analyzed by X-ray diffraction, scanning electron microscopy, UV-Vis-IR photospectroscopy, and Hall effect and Seebeck effect measurements.",

keywords = "solar photovoltaics, thin-film solar cells",

author = "Sovannary Phok and Philip Parilla and Kini, {Rajeev N.} and Raghu Bhattacharya and Bobby To and Joel Pankow",

year = "2010",

doi = "10.1109/PVSC.2010.5614519",

language = "American English",

pages = "2946--2951",

note = "35th IEEE Photovoltaic Specialists Conference, PVSC 2010 ; Conference date: 20-06-2010 Through 25-06-2010",

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T1 - Doped Bi-Se Thin Films for Photovoltaic Applications

AU - Phok, Sovannary

AU - Parilla, Philip

AU - Kini, Rajeev N.

AU - Bhattacharya, Raghu

AU - To, Bobby

AU - Pankow, Joel

PY - 2010

Y1 - 2010

N2 - CuxBiySez thin films with copper concentration x up to 29 mol. % are synthesized on glass substrates by chemical-bath deposition. Films with thickness in the range of 550-597 nm are fabricated by a multiple-dip process. Deposition parameters for a single-coating run are optimized to avoid re-dissolution of the particles, and to obtain large-area composition homogeneity in the films. Routine film composition Cu:Bi:Se and thickness are analyzed by X-ray fluorescence. To evaluate the doped Bi-Se thin films for potential use in photovoltaic devices, systematic investigations of the films' structural, morphological, optical, and electrical properties are performed. The physical properties of as-deposited and annealed films are analyzed by X-ray diffraction, scanning electron microscopy, UV-Vis-IR photospectroscopy, and Hall effect and Seebeck effect measurements.

AB - CuxBiySez thin films with copper concentration x up to 29 mol. % are synthesized on glass substrates by chemical-bath deposition. Films with thickness in the range of 550-597 nm are fabricated by a multiple-dip process. Deposition parameters for a single-coating run are optimized to avoid re-dissolution of the particles, and to obtain large-area composition homogeneity in the films. Routine film composition Cu:Bi:Se and thickness are analyzed by X-ray fluorescence. To evaluate the doped Bi-Se thin films for potential use in photovoltaic devices, systematic investigations of the films' structural, morphological, optical, and electrical properties are performed. The physical properties of as-deposited and annealed films are analyzed by X-ray diffraction, scanning electron microscopy, UV-Vis-IR photospectroscopy, and Hall effect and Seebeck effect measurements.

KW - solar photovoltaics

KW - thin-film solar cells

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U2 - 10.1109/PVSC.2010.5614519

DO - 10.1109/PVSC.2010.5614519

M3 - Paper

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T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010

Y2 - 20 June 2010 through 25 June 2010

ER -

Doped Bi-Se Thin Films for Photovoltaic Applications

Abstract

Conference

NREL Publication Number

Keywords

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