Doped Interlayers for Improved Selectivity in Bulk Herterojunction Organic Photovoltaic Devices

Scott Mauger, Bertrand Tremolet de Villers, Dana Olson, Melodie Glasser, Vincent Duong, Alexander Ayzner

Research output: Contribution to journalArticlepeer-review

5 Scopus Citations


Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is less selective for holes in an inverted-architecture organic photovoltaic (OPV) than it is in a conventional-architecture OPV device due to differences between the interfacial-PSS concentration at the top and bottom of the PEDOT:PSS layer. In this work, thin layers of polysulfonic acids are inserted between the poly(3-hexylthiophene) (P3HT):indene-C60 bisadduct (ICBA) bulk heterojunction (BHJ) active layer and PEDOT:PSS to create a higher concentration of acid at this interface and, therefore, mimic the distribution of materials present in a conventional device. Upon thermal annealing, this acid layer oxidizes P3HT, creating a thin p-type interlayer of P3HT+/acid- on top of the BHJ. Using X-ray absorption spectroscopy, Kelvin probe, and ellipsometry measurements, this P3HT+/acid- layer is shown to be insoluble in water, indicating it remains intact during the subsequent deposition of PEDOT:PSS. Current density-voltage measurements show this doped interlayer reduces injected dark current while increasing both open-circuit voltage and fill factor through the creation of a more hole selective BHJ-PEDOT:PSS interface.

Original languageAmerican English
Article number1500346
JournalAdvanced Materials Interfaces
Issue number2
StatePublished - 2016

Bibliographical note

Publisher Copyright:
© 2015 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

NREL Publication Number

  • NREL/JA-5900-64540


  • charge selectivity
  • doping
  • interlayers
  • organic photovoltaics


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