Doped Passivated Contacts

David Young (Inventor), Pauls Stradins (Inventor), Benjamin Lee (Inventor)

Research output: Patent


PolySi:Ga/SiO.sub.2 passivated contacts were prepared using ion implantation and dopant inks to introduce Ga into a-Si. Following crystallization anneals these p-type contacts exhibited improved passivation (iVoc of about 730 mV) over B-doped passivated contacts for solar cells.
Original languageAmerican English
Patent number11,362,221 B2
Filing date14/06/22
StatePublished - 2022

NREL Publication Number

  • NREL/PT-5900-83210


  • fabrication
  • gallium doped passivated contacts
  • ion implantation
  • spin-on doping


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