Doping and Hydrogenation by Ion Implantation of Glow Discharge Deposited Amorphous Silicon Films

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)241-243
    Number of pages3
    JournalApplied Physics Letters
    Issue number3
    StatePublished - 1990

    Bibliographical note

    Work performed by CNR-Instituto Lamel, Bologna, Italy; Solar Energy Research Institute, Golden, Colorado; Faculty of Engineering, University of Bologna, Bologna, Italy

    NREL Publication Number

    • ACNR/JA-212-11256

    Cite this