Doping CdSexTe1-x/CdTe Graded Absorber Films with Arsenic for Thin-Film Photovoltaics

Amit H. Munshi, Adam H. Danielson, Santosh Swain, Carey L. Reich, Tushar M. Shimpi, Seth W. McPherson, Kelvin G. Lynn, Darius Kuciauskas, Andrew Ferguson, Jinglong Guo, Robert Klie, Walajabad S. Sampath

Research output: Contribution to conferencePaperpeer-review

2 Scopus Citations


CdTe thin-film photovoltaics have demonstrated some of the lowest costs of electricity generation owing to its low material cost and ease of manufacturing. However, the full potential of polycrystalline CdTe photovoltaics can only be realized if the open-circuit voltage can be increased beyond 1 V Open-circuit voltage ∼850-900 mV has been consistently observed for state-of-the-art polycrystalline CdTe solar cells. Open-circuit voltage of over 1V has been demonstrated for single crystal CdTe devices by doping with Group V elements. Therefore, this study is aimed at understanding behavior of polycrystalline CdTe devices with arsenic doping, its activation and process and performance optimization in order to overcome current voltage limitations in CdTe solar cells.

Original languageAmerican English
Number of pages4
StatePublished - Jun 2019
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: 16 Jun 201921 Jun 2019


Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/TerritoryUnited States

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

NREL Publication Number

  • NREL/CP-5900-76324


  • arsenic
  • doping
  • II-VI semiconductor materials
  • photovoltaic cells
  • thin film devices


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