Abstract
CdTe thin-film photovoltaics have demonstrated some of the lowest costs of electricity generation owing to its low material cost and ease of manufacturing. However, the full potential of polycrystalline CdTe photovoltaics can only be realized if the open-circuit voltage can be increased beyond 1 V Open-circuit voltage ∼850-900 mV has been consistently observed for state-of-the-art polycrystalline CdTe solar cells. Open-circuit voltage of over 1V has been demonstrated for single crystal CdTe devices by doping with Group V elements. Therefore, this study is aimed at understanding behavior of polycrystalline CdTe devices with arsenic doping, its activation and process and performance optimization in order to overcome current voltage limitations in CdTe solar cells.
Original language | American English |
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Pages | 28-31 |
Number of pages | 4 |
DOIs | |
State | Published - Jun 2019 |
Event | 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019 |
Conference
Conference | 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 |
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Country/Territory | United States |
City | Chicago |
Period | 16/06/19 → 21/06/19 |
Bibliographical note
Publisher Copyright:© 2019 IEEE.
NREL Publication Number
- NREL/CP-5900-76324
Keywords
- arsenic
- doping
- II-VI semiconductor materials
- photovoltaic cells
- thin film devices