Doping Dependence and Anisotropy of Minority Electron Mobility in Molecular Beam Epitaxy-Grown p Type GaInP

N. M. Haegel, T. Christian, C. Scandrett, A. G. Norman, A. Mascarenhas, Pranob Misra, Ting Liu, Arsen Sukiasyan, Evan Pickett, Homan Yuen

Research output: Contribution to journalArticlepeer-review

13 Scopus Citations

Abstract

Direct imaging of minority electron transport via the spatially resolved recombination luminescence signature has been used to determine carrier diffusion lengths in GaInP as a function of doping. Minority electron mobility values are determined by performing time resolved photoluminescence measurements of carrier lifetime on the same samples. Values at 300K vary from ∼2000 to 400cm2/Vs and decrease with increasing doping. Anisotropic diffusion lengths and strongly polarized photoluminescence are observed, resulting from lateral composition modulation along the [110] direction. We report anisotropic mobility values associated with carrier transport parallel and perpendicular to the modulation direction.

Original languageAmerican English
Article numberArticle No. 202116
Number of pages5
JournalApplied Physics Letters
Volume105
Issue number20
DOIs
StatePublished - 17 Nov 2014

Bibliographical note

Publisher Copyright:
© 2014 AIP Publishing LLC.

NREL Publication Number

  • NREL/JA-5K00-63095

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