Doping-Dependent Device Functionality of InP/InAlGaAs Long-Wavelength Light-Emitting Transistors

Y. Huang; J. H. Ryou; R. D. Dupuis; F. Dixon; M. Feng; N. Holonyak; D. Kuciauskas

doi:10.1063/1.3633345

Doping-Dependent Device Functionality of InP/InAlGaAs Long-Wavelength Light-Emitting Transistors

Y. Huang, J. H. Ryou, R. D. Dupuis, F. Dixon, M. Feng, N. Holonyak, D. Kuciauskas

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

3 Scopus Citations

Abstract

We report on the control of functionality in long-wavelength light-emitting transistors (LETs) with an InGaAs single quantum-well embedded in N-InP/p-InAlGaAs/N-InAlAs structures by means of the choice of the doping level and dopant in the p-type base layer. As a dual-functional device, the LET works as a heterojunction bipolar transistor (HBT) with a current gain of ∼45 when the base doping level is ∼2 ×10¹⁸ cm^-3 using zinc (Zn) as the dopant, and it functions like an efficient light-emitting diode (LED) with a carrier capture efficiency of ∼82 when the base doping is ∼8×10¹⁸ cm^-3 using carbon (C) as the dopant. The distinctive device performance and functionality of Zn- and C-doped LETs are attributed to the different quantum capture efficiency and carrier lifetime in the quantum well originating from different base doping schemes.

Original language	American English
Article number	103502
Number of pages	3
Journal	Applied Physics Letters
Volume	99
Issue number	10
DOIs	https://doi.org/10.1063/1.3633345 https://doi.org/10.1063/1.3633345
State	Published - 5 Sep 2011

NREL Publication Number

NREL/JA-5200-52878

Keywords

doping-dependent
heterojunction bipolar transistor
light-emitting transistors

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title = "Doping-Dependent Device Functionality of InP/InAlGaAs Long-Wavelength Light-Emitting Transistors",

abstract = "We report on the control of functionality in long-wavelength light-emitting transistors (LETs) with an InGaAs single quantum-well embedded in N-InP/p-InAlGaAs/N-InAlAs structures by means of the choice of the doping level and dopant in the p-type base layer. As a dual-functional device, the LET works as a heterojunction bipolar transistor (HBT) with a current gain of ∼45 when the base doping level is ∼2 ×1018 cm-3 using zinc (Zn) as the dopant, and it functions like an efficient light-emitting diode (LED) with a carrier capture efficiency of ∼82 when the base doping is ∼8×1018 cm-3 using carbon (C) as the dopant. The distinctive device performance and functionality of Zn- and C-doped LETs are attributed to the different quantum capture efficiency and carrier lifetime in the quantum well originating from different base doping schemes.",

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AU - Huang, Y.

AU - Ryou, J. H.

AU - Dupuis, R. D.

AU - Dixon, F.

AU - Feng, M.

AU - Holonyak, N.

AU - Kuciauskas, D.

PY - 2011/9/5

Y1 - 2011/9/5

N2 - We report on the control of functionality in long-wavelength light-emitting transistors (LETs) with an InGaAs single quantum-well embedded in N-InP/p-InAlGaAs/N-InAlAs structures by means of the choice of the doping level and dopant in the p-type base layer. As a dual-functional device, the LET works as a heterojunction bipolar transistor (HBT) with a current gain of ∼45 when the base doping level is ∼2 ×1018 cm-3 using zinc (Zn) as the dopant, and it functions like an efficient light-emitting diode (LED) with a carrier capture efficiency of ∼82 when the base doping is ∼8×1018 cm-3 using carbon (C) as the dopant. The distinctive device performance and functionality of Zn- and C-doped LETs are attributed to the different quantum capture efficiency and carrier lifetime in the quantum well originating from different base doping schemes.

AB - We report on the control of functionality in long-wavelength light-emitting transistors (LETs) with an InGaAs single quantum-well embedded in N-InP/p-InAlGaAs/N-InAlAs structures by means of the choice of the doping level and dopant in the p-type base layer. As a dual-functional device, the LET works as a heterojunction bipolar transistor (HBT) with a current gain of ∼45 when the base doping level is ∼2 ×1018 cm-3 using zinc (Zn) as the dopant, and it functions like an efficient light-emitting diode (LED) with a carrier capture efficiency of ∼82 when the base doping is ∼8×1018 cm-3 using carbon (C) as the dopant. The distinctive device performance and functionality of Zn- and C-doped LETs are attributed to the different quantum capture efficiency and carrier lifetime in the quantum well originating from different base doping schemes.

KW - doping-dependent

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Doping-Dependent Device Functionality of InP/InAlGaAs Long-Wavelength Light-Emitting Transistors

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Keywords

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