Doping Effects on CdO Thin Films

X. Li, T. Barnes, C. DeHart, D. King, S. Asher, M. Young, T. A. Gessert, T. J. Coutts

Research output: Contribution to conferencePaperpeer-review

3 Scopus Citations


This paper reports the properties of undoped CdO films and CdO films doped with the group VII element F and the group IV element Sn. The CdO films are made by low-pressure chemical-vapor deposition. We observe that undoped CdO films can achieve a carrier concentration of 1021 cm-3, apparently by controlling the intrinsic defect. However, the electron mobility of these films is only around 2 cm2 V-1 s-1. With fluorine doping, an electron mobility of ∼260 cm2 V-1 s-1 has been achieved. However, low carrier concentration results because of the low solubility of F in CdO film. CdO films doped with both Sn and F demonstrate carrier concentrations of 1021 cm-3 and reasonable electron mobilities of around 20 cm2 V-1 s-1. Due to the small effective electron mass of CdO, a large Burstein-Moss shift is observed for films with high carrier concentration. The shift enables the fundamental absorption edges of undoped CdO films to reach 3.0 eV and 3.3 eV for films doped with both Sn and F.

Original languageAmerican English
StatePublished - 2001
EventTransport and Microstructural Phenomena in Oxide Electronics - San Francisco, CA, United States
Duration: 16 Apr 200120 Apr 2001


ConferenceTransport and Microstructural Phenomena in Oxide Electronics
Country/TerritoryUnited States
CitySan Francisco, CA

NREL Publication Number

  • NREL/CP-520-30072


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