Doping of Gallium Arsenide in a Low Pressure Organometallic CVD System; II. Hydrogen Sulfide

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)551-558
    Number of pages8
    JournalJournal of Crystal Growth
    Issue number3
    StatePublished - 1986

    Bibliographical note

    Work performed by Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York

    NREL Publication Number

    • ACNR/JA-7995

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