Doping of High-Quality Epitaxial Silicon Grown by Hot-Wire Chemical Vapor Deposition Near 700 ..deg..C

Research output: Contribution to journalArticlepeer-review

Original languageAmerican English
Pages (from-to)3496-3498
Number of pages3
JournalThin Solid Films
Volume517
Issue number12
DOIs
StatePublished - 2009

NREL Publication Number

  • NREL/JA-520-45852

Keywords

  • doping
  • epitaxy
  • hall
  • hot-wire
  • mobility
  • photovoltaics
  • silicon
  • SIMS

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