Doping of High-Quality Epitaxial Silicon Grown by Hot-Wire Chemical Vapor Deposition Near 700 ..deg..C

  • Ina Martin
  • , David Young
  • , Charles Teplin

    Research output: Contribution to journalArticlepeer-review

    Original languageAmerican English
    Pages (from-to)3496-3498
    Number of pages3
    JournalThin Solid Films
    Volume517
    Issue number12
    DOIs
    StatePublished - 2009

    NLR Publication Number

    • NREL/JA-520-45852

    Keywords

    • doping
    • epitaxy
    • hall
    • hot-wire
    • mobility
    • photovoltaics
    • silicon
    • SIMS

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