Doping Properties of Cadmium-Rich Arsenic-Doped CdTe for Application of Single Crystal Solar Cell

Darius Kuciauskas; Akira Nagaoka; Yoshitaro Nose; Michael Scarpulla

doi:10.1109/PVSC.2018.8547216

Doping Properties of Cadmium-Rich Arsenic-Doped CdTe for Application of Single Crystal Solar Cell

Darius Kuciauskas, Akira Nagaoka, Yoshitaro Nose, Michael Scarpulla

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

Abstract

We report on properties of As doped CdTe single crystals grown from Cd solvent by the travelling heater method.The activation energy of 70 meV derived from temperaturedependent Hall effect are consistent with As _Te as the dominant acceptor. Bulk minority carrier lifetimes exceeding 20 ns are observed. We observe persistent photoconductivity, a hallmark of light-induced metastable configuration changes consistent with AX behavior. Cd-rich As-doepd CdTe single crystal was used as absorbing layer in solar cell, and this device can be performed with open-circuit voltage of 900 mV. next.

Original language	American English
Pages	157-159
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2018.8547216 https://doi.org/10.1109/PVSC.2018.8547216
State	Published - 26 Nov 2018
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: 10 Jun 2018 → 15 Jun 2018

Conference

Conference	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/Territory	United States
City	Waikoloa Village
Period	10/06/18 → 15/06/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

NREL Publication Number

NREL/CP-5900-73727

Keywords

bulk carrier lifetime
Cadmium compounds
metastable defect
photovoltaic cells
single crystal

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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Kuciauskas, D., Nagaoka, A., Nose, Y., & Scarpulla, M. (2018). Doping Properties of Cadmium-Rich Arsenic-Doped CdTe for Application of Single Crystal Solar Cell. 157-159. Paper presented at 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States. https://doi.org/10.1109/PVSC.2018.8547216, https://doi.org/10.1109/PVSC.2018.8547216

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abstract = " We report on properties of As doped CdTe single crystals grown from Cd solvent by the travelling heater method.The activation energy of 70 meV derived from temperaturedependent Hall effect are consistent with As Te as the dominant acceptor. Bulk minority carrier lifetimes exceeding 20 ns are observed. We observe persistent photoconductivity, a hallmark of light-induced metastable configuration changes consistent with AX behavior. Cd-rich As-doepd CdTe single crystal was used as absorbing layer in solar cell, and this device can be performed with open-circuit voltage of 900 mV. next.",

keywords = "bulk carrier lifetime, Cadmium compounds, metastable defect, photovoltaic cells, single crystal",

author = "Darius Kuciauskas and Akira Nagaoka and Yoshitaro Nose and Michael Scarpulla",

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doi = "10.1109/PVSC.2018.8547216",

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Kuciauskas, D, Nagaoka, A, Nose, Y & Scarpulla, M 2018, 'Doping Properties of Cadmium-Rich Arsenic-Doped CdTe for Application of Single Crystal Solar Cell', Paper presented at 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 10/06/18 - 15/06/18 pp. 157-159. https://doi.org/10.1109/PVSC.2018.8547216, https://doi.org/10.1109/PVSC.2018.8547216

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T1 - Doping Properties of Cadmium-Rich Arsenic-Doped CdTe for Application of Single Crystal Solar Cell

AU - Kuciauskas, Darius

AU - Nagaoka, Akira

AU - Nose, Yoshitaro

AU - Scarpulla, Michael

PY - 2018/11/26

Y1 - 2018/11/26

N2 - We report on properties of As doped CdTe single crystals grown from Cd solvent by the travelling heater method.The activation energy of 70 meV derived from temperaturedependent Hall effect are consistent with As Te as the dominant acceptor. Bulk minority carrier lifetimes exceeding 20 ns are observed. We observe persistent photoconductivity, a hallmark of light-induced metastable configuration changes consistent with AX behavior. Cd-rich As-doepd CdTe single crystal was used as absorbing layer in solar cell, and this device can be performed with open-circuit voltage of 900 mV. next.

AB - We report on properties of As doped CdTe single crystals grown from Cd solvent by the travelling heater method.The activation energy of 70 meV derived from temperaturedependent Hall effect are consistent with As Te as the dominant acceptor. Bulk minority carrier lifetimes exceeding 20 ns are observed. We observe persistent photoconductivity, a hallmark of light-induced metastable configuration changes consistent with AX behavior. Cd-rich As-doepd CdTe single crystal was used as absorbing layer in solar cell, and this device can be performed with open-circuit voltage of 900 mV. next.

KW - bulk carrier lifetime

KW - Cadmium compounds

KW - metastable defect

KW - photovoltaic cells

KW - single crystal

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T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018

Y2 - 10 June 2018 through 15 June 2018

ER -

Doping Properties of Cadmium-Rich Arsenic-Doped CdTe for Application of Single Crystal Solar Cell

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

UN SDGs

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