Dual-Sensor Technique for Characterization of Carrier Lifetime Decay Transients in Semiconductors

Richard Ahrenkiel; Steven Johnston; Darius Kuciauskas; Gerald Tynan

doi:10.1063/1.4903213

Dual-Sensor Technique for Characterization of Carrier Lifetime Decay Transients in Semiconductors

Richard Ahrenkiel, Steven Johnston, Darius Kuciauskas, Gerald Tynan

Research output: Contribution to journal › Article › peer-review

10 Scopus Citations

Abstract

This work addresses the frequent discrepancy between transient photoconductive (PC) decay and transient photoluminescence (PL) decay. With this dual- sensor technique, one measures the transient PC and PL decay simultaneously with the same incident light pulse, removing injection-level uncertainty. Photoconductive decay measures the transient photoconductivity, Δσ(t). PCD senses carriers released from shallow traps as well as the photo-generated electron-hole pairs. In addition, variations in carrier mobility with injection level (and time) contribute to the decay time. PL decay senses only electron-hole recombination via photon emission. Theory and experiment will show that the time dependence of the two techniques can be quite different at high injection.

Original language	American English
Article number	Article No. 214510
Number of pages	7
Journal	Journal of Applied Physics
Volume	116
Issue number	21
DOIs	https://doi.org/10.1063/1.4903213 https://doi.org/10.1063/1.4903213
State	Published - 7 Dec 2014

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Publisher Copyright:
© 2014 U.S. Government.

NREL Publication Number

NREL/JA-5J00-62687

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abstract = "This work addresses the frequent discrepancy between transient photoconductive (PC) decay and transient photoluminescence (PL) decay. With this dual- sensor technique, one measures the transient PC and PL decay simultaneously with the same incident light pulse, removing injection-level uncertainty. Photoconductive decay measures the transient photoconductivity, Δσ(t). PCD senses carriers released from shallow traps as well as the photo-generated electron-hole pairs. In addition, variations in carrier mobility with injection level (and time) contribute to the decay time. PL decay senses only electron-hole recombination via photon emission. Theory and experiment will show that the time dependence of the two techniques can be quite different at high injection.",

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AU - Tynan, Gerald

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N2 - This work addresses the frequent discrepancy between transient photoconductive (PC) decay and transient photoluminescence (PL) decay. With this dual- sensor technique, one measures the transient PC and PL decay simultaneously with the same incident light pulse, removing injection-level uncertainty. Photoconductive decay measures the transient photoconductivity, Δσ(t). PCD senses carriers released from shallow traps as well as the photo-generated electron-hole pairs. In addition, variations in carrier mobility with injection level (and time) contribute to the decay time. PL decay senses only electron-hole recombination via photon emission. Theory and experiment will show that the time dependence of the two techniques can be quite different at high injection.

AB - This work addresses the frequent discrepancy between transient photoconductive (PC) decay and transient photoluminescence (PL) decay. With this dual- sensor technique, one measures the transient PC and PL decay simultaneously with the same incident light pulse, removing injection-level uncertainty. Photoconductive decay measures the transient photoconductivity, Δσ(t). PCD senses carriers released from shallow traps as well as the photo-generated electron-hole pairs. In addition, variations in carrier mobility with injection level (and time) contribute to the decay time. PL decay senses only electron-hole recombination via photon emission. Theory and experiment will show that the time dependence of the two techniques can be quite different at high injection.

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Dual-Sensor Technique for Characterization of Carrier Lifetime Decay Transients in Semiconductors

Abstract

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