Dynamic Hydride Vapor Phase Epitaxy (D-HVPE) as a Route to Inexpensive, High-Performance III-V Materials and Devices

Aaron Ptak; John Simon; Kevin Schulte; Wondwosen Metaferia; Alessandro Cavalli

Dynamic Hydride Vapor Phase Epitaxy (D-HVPE) as a Route to Inexpensive, High-Performance III-V Materials and Devices

Aaron Ptak, John Simon, Kevin Schulte, Wondwosen Metaferia, Alessandro Cavalli

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

Abstract

This work describes the recent development of Dynamic Hydride Vapor Phase Epitaxy (D-HVPE), which extends the standard HVPE process to allow for the deposition of relatively complex heterostructures and devices at growth rates in excess of 300 µm/h. This process uses low-cost elemental metal precursors, and uses all of the reactants efficiently to create high-performance devices. D-HVPE also lends itself to potential in-line growth, which when combined with the low-cost precursors and extremely fast growth rates for high-quality III-V materials, can lead to significantly lower epitaxial growth costs. Here, we focus on the growth of high-efficiency photovoltaics as an example device to show the capabilities of the D-HVPE growth process.

Original language	American English
Number of pages	4
State	Published - 2019
Event	2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, United States Duration: 29 Apr 2019 → 2 May 2019

Conference

Conference	2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019
Country/Territory	United States
City	Minneapolis
Period	29/04/19 → 2/05/19

Bibliographical note

Publisher Copyright:
© 2019 CS Mantech. All rights reserved.

NREL Publication Number

NREL/CP-5900-73313

Keywords

High throughput
Hydride vapor phase epitaxy
III-V devices
III-V materials
Low cost

Cite this

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abstract = "This work describes the recent development of Dynamic Hydride Vapor Phase Epitaxy (D-HVPE), which extends the standard HVPE process to allow for the deposition of relatively complex heterostructures and devices at growth rates in excess of 300 µm/h. This process uses low-cost elemental metal precursors, and uses all of the reactants efficiently to create high-performance devices. D-HVPE also lends itself to potential in-line growth, which when combined with the low-cost precursors and extremely fast growth rates for high-quality III-V materials, can lead to significantly lower epitaxial growth costs. Here, we focus on the growth of high-efficiency photovoltaics as an example device to show the capabilities of the D-HVPE growth process.",

keywords = "High throughput, Hydride vapor phase epitaxy, III-V devices, III-V materials, Low cost",

author = "Aaron Ptak and John Simon and Kevin Schulte and Wondwosen Metaferia and Alessandro Cavalli",

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Dynamic Hydride Vapor Phase Epitaxy (D-HVPE) as a Route to Inexpensive, High-Performance III-V Materials and Devices. / Ptak, Aaron ; Simon, John ; Schulte, Kevin et al.
2019. Paper presented at 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Minneapolis, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Dynamic Hydride Vapor Phase Epitaxy (D-HVPE) as a Route to Inexpensive, High-Performance III-V Materials and Devices

AU - Ptak, Aaron

AU - Simon, John

AU - Schulte, Kevin

AU - Metaferia, Wondwosen

AU - Cavalli, Alessandro

PY - 2019

Y1 - 2019

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AB - This work describes the recent development of Dynamic Hydride Vapor Phase Epitaxy (D-HVPE), which extends the standard HVPE process to allow for the deposition of relatively complex heterostructures and devices at growth rates in excess of 300 µm/h. This process uses low-cost elemental metal precursors, and uses all of the reactants efficiently to create high-performance devices. D-HVPE also lends itself to potential in-line growth, which when combined with the low-cost precursors and extremely fast growth rates for high-quality III-V materials, can lead to significantly lower epitaxial growth costs. Here, we focus on the growth of high-efficiency photovoltaics as an example device to show the capabilities of the D-HVPE growth process.

KW - High throughput

KW - Hydride vapor phase epitaxy

KW - III-V devices

KW - III-V materials

KW - Low cost

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M3 - Paper

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T2 - 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019

Y2 - 29 April 2019 through 2 May 2019

ER -

Dynamic Hydride Vapor Phase Epitaxy (D-HVPE) as a Route to Inexpensive, High-Performance III-V Materials and Devices

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

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