Abstract
We demonstrate the uniqueness of Dynamic Hydride Vapor Phase Epitaxy (D-HVPE) to deposit III-V materials for high efficiency and potentially low-cost photovoltaics applications. Unlike traditional HVPE, D-HVPE allows for the deposition of relatively complex heterostructures and devices at high growth rates. We recently achieved record growth rates > 500 µm/h for GaAs and >200 µm/h for GaInP in our D-HVPE, and have not yet reached a growth rate limit for either material. We grew single junction GaAs solar cells at growth rates up to 309 µm/h without significant degradation of solar cell performance. We also demonstrate growth of Al-containing III-V materials in HVPE, a capability that makes D-HVPE more attractive for applications beyond photovoltaics.
Original language | American English |
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Number of pages | 5 |
State | Published - 2020 |
Event | Compound Semiconductor Week (CSW) 2020 - Stockholm, Sweden Duration: 17 May 2020 → 21 May 2020 |
Conference
Conference | Compound Semiconductor Week (CSW) 2020 |
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City | Stockholm, Sweden |
Period | 17/05/20 → 21/05/20 |
NREL Publication Number
- NREL/CP-5900-76122
Keywords
- D-HVPE
- GaAs solar cell
- high growth rate