Dynamic Hydride Vapor Phase Epitaxy of III-V Materials for Photovoltaics Applications: Preprint

Wondwosen Metaferia, Elisabeth McClure, Kevin Schulte, John Simon, Dennice Roberts, Aaron Ptak

Research output: Contribution to conferencePaper

Abstract

We demonstrate the uniqueness of Dynamic Hydride Vapor Phase Epitaxy (D-HVPE) to deposit III-V materials for high efficiency and potentially low-cost photovoltaics applications. Unlike traditional HVPE, D-HVPE allows for the deposition of relatively complex heterostructures and devices at high growth rates. We recently achieved record growth rates > 500 µm/h for GaAs and >200 µm/h for GaInP in our D-HVPE, and have not yet reached a growth rate limit for either material. We grew single junction GaAs solar cells at growth rates up to 309 µm/h without significant degradation of solar cell performance. We also demonstrate growth of Al-containing III-V materials in HVPE, a capability that makes D-HVPE more attractive for applications beyond photovoltaics.
Original languageAmerican English
Number of pages5
StatePublished - 2020
EventCompound Semiconductor Week (CSW) 2020 - Stockholm, Sweden
Duration: 17 May 202021 May 2020

Conference

ConferenceCompound Semiconductor Week (CSW) 2020
CityStockholm, Sweden
Period17/05/2021/05/20

NREL Publication Number

  • NREL/CP-5900-76122

Keywords

  • D-HVPE
  • GaAs solar cell
  • high growth rate

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