Abstract
An above-band-gap transition E+ is experimentally observed in the dilute Ga As1-x Bix alloy. Precise measurements at very low dilutions are made of the above-band-gap transition E+ that is observed in Ga As1-x Nx, making it possible to compare the behavior of the different isoelectronic traps Bi and N in the common host GaAs with respect to their perturbation to the host electronic structure. We suggest that the origin of the E+ level observed in GaAs is not the isolated isoelectronic impurity level Nx, as is presumed in the band-anticrossing model, but rather the isoelectronic-impurity-induced perturbation of the conduction band L6c.
Original language | American English |
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Article number | 155209 |
Number of pages | 5 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 76 |
Issue number | 15 |
DOIs | |
State | Published - 23 Oct 2007 |
NREL Publication Number
- NREL/JA-590-41037