E+ Transition in GaAs1-xNx and GaAs1-xBix Due to Isoelectronic-Impurity-Induced Perturbation of the Conduction Band

B. Fluegel, A. Mascarenhas, A. J. Ptak, S. Tixier, E. C. Young, T. Tiedje

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Abstract

An above-band-gap transition E+ is experimentally observed in the dilute Ga As1-x Bix alloy. Precise measurements at very low dilutions are made of the above-band-gap transition E+ that is observed in Ga As1-x Nx, making it possible to compare the behavior of the different isoelectronic traps Bi and N in the common host GaAs with respect to their perturbation to the host electronic structure. We suggest that the origin of the E+ level observed in GaAs is not the isolated isoelectronic impurity level Nx, as is presumed in the band-anticrossing model, but rather the isoelectronic-impurity-induced perturbation of the conduction band L6c.

Original languageAmerican English
Article number155209
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume76
Issue number15
DOIs
StatePublished - 23 Oct 2007

NREL Publication Number

  • NREL/JA-590-41037

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