Effect of a-Si:C:H Graded p/i Interface on the Performance and Stability of a-Si:H p-i-n Solar Cells

Effect of a-Si:C:H Graded p/i Interface on the Performance and Stability of a-Si:H p-i-n Solar Cells

Research output: Contribution to conference › Paper

Original language	American English
Pages	457-460
Number of pages	4
State	Published - 1987
Event	3rd International Photovoltaic Science and Engineering Conference - Tokyo, Japan Duration: 3 Nov 1987 → 6 Nov 1987

Conference

Conference	3rd International Photovoltaic Science and Engineering Conference
City	Tokyo, Japan
Period	3/11/87 → 6/11/87

Bibliographical note

Work performed by Solarex Thin Film Division, Newtown, Pennsylvania

NREL Publication Number

ACNR/CP-9958

Cite this

@conference{3738a01cf00841f397b6ffe14ae0d078,

title = "Effect of a-Si:C:H Graded p/i Interface on the Performance and Stability of a-Si:H p-i-n Solar Cells",

author = "NREL",

note = "Work performed by Solarex Thin Film Division, Newtown, Pennsylvania; 3rd International Photovoltaic Science and Engineering Conference ; Conference date: 03-11-1987 Through 06-11-1987",

year = "1987",

language = "American English",

pages = "457--460",

}

TY - CONF

T1 - Effect of a-Si:C:H Graded p/i Interface on the Performance and Stability of a-Si:H p-i-n Solar Cells

AU - NREL, null

N1 - Work performed by Solarex Thin Film Division, Newtown, Pennsylvania

PY - 1987

Y1 - 1987

M3 - Paper

SP - 457

EP - 460

T2 - 3rd International Photovoltaic Science and Engineering Conference

Y2 - 3 November 1987 through 6 November 1987

ER -